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STX715-AP

STMicroelectronics

STX715-AP by STMicroelectronics

STX715-AP by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 0.9 W, operates up to 150 °C, and supports collector-emitter voltages of 80 V. Ideal for efficient circuit designs in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,224 parts In-Stock

1+ parts

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8,224

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Digiode

USA . 2,816 parts In-Stock

1+ parts

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2,816

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Anansix

USA . 858 parts In-Stock

1+ parts

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858

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,095 parts In-Stock

1+ parts

$1.241

100+ parts

-

1k+ parts

$1.117

10k+ parts

-

1,095

$1.241

-

$1.117

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$2.326

100+ parts

$2.117

1k+ parts

$1.907

10k+ parts

-

1,000

$2.326

$2.117

$1.907

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MKK Technologies

India . 1,798 parts In-Stock

1+ parts

$2.334

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1,798

$2.334

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DigiPath Technology Company

USA . 1,798 parts In-Stock

1+ parts

$2.334

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1,798

$2.334

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AZTECH Wire

Italy . 801 parts In-Stock

1+ parts

$20.570

100+ parts

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801

$20.570

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Alle Elektronik GmbH

Germany . 1,600 parts In-Stock

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1,600

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Corphita

USA . 105 parts In-Stock

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105

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Parana Technologies

USA . 9 parts In-Stock

1+ parts

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100+ parts

$1.484

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9

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$1.484

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Overview

Experience the exceptional reliability and performance of the STX715-AP NPN transistor from STMicroelectronics, a leader in innovative semiconductor solutions. Designed for efficient switching applications, this robust device provides superior power dissipation and thermal stability, ensuring your projects run smoothly even under demanding conditions. With its durable plastic/epoxy package and versatile through-hole design, the STX715-AP seamlessly integrates into a wide range of electronics, from consumer devices to industrial controls, delivering unmatched value and efficiency for your designs. Elevate your application with STMicroelectronics' commitment to quality and excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making this transistor suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in switching and amplification applications, providing versatility and ease of integration in circuits.

Configuration: SINGLE

A single configuration simplifies the design process and allows for compact circuit designs, which is beneficial in space-constrained applications.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor is ideal for controlling power in electronic devices efficiently.

Package Shape: ROUND

The round shape facilitates easier PCB placement and improves heat dissipation properties, enhancing the reliability of the device.

Terminal Form: THROUGH-HOLE

Through-hole mounting provides robust mechanical support, making the transistor suitable for high-stress environments.

No. of Terminals: 3

Three terminals allow for straightforward connection and integration in various electronic circuits, simplifying the design process.

Maximum Power Dissipation (Abs): 0.9 W

With a maximum power dissipation of 0.9 W, this transistor can handle moderate power levels, making it suitable for low to medium power applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style enhances thermal management and allows for efficient heat dissipation during operation.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 indicates good amplification capabilities, making this device excellent for signal amplification tasks.

Maximum Operating Temperature: 150 °C

Having a maximum operating temperature of 150 °C ensures reliable performance in high-temperature environments.

Maximum Collector-Emitter Voltage: 80 V

An 80 V maximum collector-emitter voltage capability allows the transistor to be used in a wide range of applications, including those involving higher voltages.

Transistor Element Material: SILICON

Silicon-based transistors are known for their excellent electrical characteristics, making them a standard choice for reliable performance.

Maximum Collector Current (IC): 1.5 A

A maximum collector current of 1.5 A makes this transistor suitable for driving various loads, providing versatility in circuit design.

Terminal Position: BOTTOM

Bottom terminal positioning can aid in better footprint management on PCBs, optimizing layout design.

Nominal Transition Frequency (fT): 50 MHz

A transition frequency of 50 MHz indicates that this transistor can operate effectively in high-frequency applications, making it versatile for RF and digital circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) STX715-AP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

STX715-AP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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