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STX790A-AP

STMicroelectronics

STX790A-AP by STMicroelectronics

STX790A-AP by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9W, operates up to 150 °C, and supports collector currents of 3A. Its cylindrical package ensures efficient thermal management in compact designs.

Median Price

$0.145

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 9 parts In-Stock

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$0.145

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9

$0.145

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Chip1Stop

Japan . 9 parts In-Stock

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9

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Digiode

USA . 1,703 parts In-Stock

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$0.136

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1,703

$0.136

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Vyrian

USA . 3,331 parts In-Stock

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Anansix

USA . 980 parts In-Stock

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980

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Distributors (Availability)

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Corphita

USA . 3,379 parts In-Stock

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$0.129

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3,379

$0.129

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IDEA Electronic Components Group

UK . 766 parts In-Stock

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$0.492

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$0.443

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766

$0.492

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$0.443

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MKK Technologies

India . 461 parts In-Stock

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$0.926

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461

$0.926

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DigiPath Technology Company

USA . 461 parts In-Stock

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$0.926

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461

$0.926

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AZTECH Wire

Italy . 483 parts In-Stock

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$21.720

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Perfect Parts

USA . 6,044 parts In-Stock

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6,044

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Parana Technologies

USA . 374 parts In-Stock

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$0.588

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374

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$0.588

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Overview

Elevate your designs with the STX790A-AP PNP transistor from STMicroelectronics, a trusted leader in semiconductor innovation. Engineered for seamless switching applications, this reliable component ensures optimal performance even under demanding conditions. Benefit from its robust power dissipation and impressive gain, making it ideal for consumer electronics, automotive, and industrial uses. Experience unparalleled quality and efficiency that empowers your projects to thrive!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package material ensures durability and resistance to environmental factors, making this component ideal for various applications.

Polarity or Channel Type: PNP

With a PNP configuration, this transistor can be effectively used in high-side switching configurations, providing flexibility for many circuit designs.

Configuration: SINGLE

A single configuration simplifies design and integration into circuits, making it easier for engineers to implement.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently control power, making it suitable for a range of electronic devices.

Package Shape: ROUND

The round shape of the package allows for easy integration into circuit boards while maintaining a compact size.

Terminal Form: THROUGH-HOLE

Through-hole technology provides robust connectivity, ensuring better mechanical stability in circuit assemblies.

No. of Terminals: 3

Having three terminals simplifies the design for connections, allowing straightforward circuit configuration.

Maximum Power Dissipation (Abs): 0.9 W

With a maximum power dissipation of 0.9 W, this transistor can handle significant power loads, making it suitable for various applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style enhances thermal performance and cooling, aiding the efficiency of the transistor.

Minimum DC Current Gain (hFE): 90

A minimum hFE of 90 signifies good amplification capability, which enhances the transistor's efficiency in signal processing.

Maximum Operating Temperature: 150 °C

This high maximum operating temperature ensures reliability in demanding environments, extending the life of the product.

Maximum Collector-Emitter Voltage: 30 V

With a collector-emitter voltage rating of 30 V, this transistor can be effectively used in various low- to moderate-voltage applications.

Transistor Element Material: SILICON

Silicon as the element material ensures high performance and reliability, as silicon-based transistors are industry standards.

Maximum Turn On Time (ton): 430 ns

A fast turn-on time of 430 ns allows for rapid switching, essential for high-speed applications requiring quick responses.

Maximum Collector Current (IC): 3 A

Able to handle up to 3 A of collector current, this transistor is suitable for powering a variety of electronic circuits.

Maximum Turn Off Time (toff): 400 ns

A turn-off time of 400 ns means this transistor can quickly disengage in fast-switching applications, enhancing system performance.

Terminal Finish: MATTE TIN

The matte tin finish on terminals ensures good solderability and reliability, critical for robust connections in electronic assemblies.

Terminal Position: BOTTOM

The bottom terminal position allows for efficient layout and assembly in PCB designs, optimizing space and performance.

Nominal Transition Frequency (fT): 100 MHz

With a nominal transition frequency of 100 MHz, this transistor is suitable for RF applications, ensuring high-frequency performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) STX790A-AP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

90

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

400 ns

Maximum Turn On Time (ton):

430 ns

Trade Compliance

STX790A-AP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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