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STX724

STMicroelectronics

STX724 by STMicroelectronics

STX724 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 0.9 W, operates up to 150 °C, and supports collector currents up to 3 A. Its cylindrical package ensures easy integration in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,951 parts In-Stock

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1,951

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Vyrian

USA . 1,405 parts In-Stock

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1,405

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Anansix

USA . 233 parts In-Stock

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233

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Bisco

USA . 177 parts In-Stock

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177

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 196 parts In-Stock

1+ parts

$0.637

100+ parts

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$0.573

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196

$0.637

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$0.573

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MKK Technologies

India . 149 parts In-Stock

1+ parts

$1.197

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149

$1.197

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DigiPath Technology Company

USA . 149 parts In-Stock

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$1.197

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149

$1.197

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Component Stockers USA

USA . 316 parts In-Stock

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$99.990

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316

$99.990

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Kepictronics

USA . 4,500 parts In-Stock

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4,500

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Perfect Parts

USA . 2,800 parts In-Stock

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2,800

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Corphita

USA . 2,542 parts In-Stock

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2,542

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Parana Technologies

USA . 1,393 parts In-Stock

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$0.761

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1,393

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$0.761

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Assy Fe

Spain . 30 parts In-Stock

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30

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Overview

Unlock exceptional performance with the STX724 from STMicroelectronics, a trusted leader in semiconductor innovation. Crafted for precision switching applications, this NPN transistor ensures reliability and efficiency across various electronic designs. Its robust 3-terminal cylindrical package is tailored for easy integration, making it ideal for both industrial and consumer electronics. Choose STMicroelectronics for superior quality and elevate your projects with the STX724's unmatched value and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy materials provides durability and protection against environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN configuration is commonly used in amplification and switching applications, offering versatility in circuit designs.

Configuration: SINGLE

A single transistor configuration simplifies circuit design and reduces space requirements on the PCB.

Transistor Application: SWITCHING

Optimized for switching applications, it ensures efficient operation in fast signal processing scenarios.

Package Shape: ROUND

The round package shape allows for effective heat dissipation and ensures reliability in high-performance applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical stability and are ideal for high-power applications.

No. of Terminals: 3

Three terminals allow for a standard configuration, simplifying integration into various electronic circuits.

Maximum Power Dissipation (Abs): 0.9 W

With a maximum power dissipation of 0.9 W, this transistor can handle significant power levels while maintaining performance.

Package Style (Meter): CYLINDRICAL

The cylindrical package style enables dense component packing, making it suitable for compact designs.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 ensures good amplification capabilities, making it effective for signal processing.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this transistor can operate reliably in demanding environments.

Maximum Collector-Emitter Voltage: 30 V

The 30 V rating ensures this transistor can handle typical voltages encountered in many electronic applications.

Transistor Element Material: SILICON

Silicon is a standard material for BJTs, providing excellent performance characteristics and reliability.

Maximum Collector Current (IC): 3 A

A maximum collector current rating of 3 A allows this transistor to power larger loads effectively.

Terminal Position: BOTTOM

Bottom terminal position aids in compact layouts and effective thermal management in circuit designs.

Nominal Transition Frequency (fT): 100 MHz

The nominal transition frequency of 100 MHz allows for high-frequency applications, making it suitable for a variety of signal processing tasks.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) STX724 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

STX724 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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