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STX790A

STMicroelectronics

STX790A by STMicroelectronics

STX790A by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9W, operates up to 150 °C, and supports collector currents of 3A. Its compact cylindrical package ensures efficient performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,046 parts In-Stock

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3,046

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Anansix

USA . 2,726 parts In-Stock

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2,726

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Digiode

USA . 587 parts In-Stock

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587

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,593 parts In-Stock

1+ parts

$1.713

100+ parts

-

1k+ parts

$1.542

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1,593

$1.713

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$1.542

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MKK Technologies

India . 925 parts In-Stock

1+ parts

$3.221

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925

$3.221

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DigiPath Technology Company

USA . 925 parts In-Stock

1+ parts

$3.221

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925

$3.221

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AZTECH Wire

Italy . 501 parts In-Stock

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$13.920

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501

$13.920

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Corphita

USA . 4,583 parts In-Stock

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4,583

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Alle Elektronik GmbH

Germany . 4,468 parts In-Stock

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4,468

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Parana Technologies

USA . 23 parts In-Stock

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$2.048

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23

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$2.048

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Overview

Unlock exceptional performance with the STX790A from STMicroelectronics—a trusted leader in innovative semiconductor solutions. This PNP bipolar junction transistor excels in switching applications, delivering reliable operation even in demanding environments. With its robust design and impressive thermal stability, it ensures longevity and efficiency for your projects. Elevate your designs while benefiting from ST's renowned quality and commitment to excellence—experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material provides excellent protection and reliability, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into designs that require negative voltage control, enhancing circuit flexibility.

Configuration: SINGLE

As a single transistor, this device is compact and easy to integrate into circuits without added complexity.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor enables fast switching speeds and efficient performance in circuitry.

Package Shape: ROUND

The round package shape is beneficial for space-saving applications, allowing for denser circuit designs.

Terminal Form: THROUGH-HOLE

Through-hole mounting provides robust mechanical support and is favored for high-power applications.

No. of Terminals: 3

With three terminals, this transistor is versatile for various circuit configurations, offering flexibility in design.

Maximum Power Dissipation (Abs): 0.9 W

A maximum power dissipation of 0.9 W allows the transistor to handle considerable energy levels, making it suitable for high-power applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is ideal for heat dissipation, improving performance during operation.

Minimum DC Current Gain (hFE): 90

A minimum hFE of 90 ensures strong amplification capabilities, making this transistor effective in signal processing.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature of 150 °C guarantees reliability and performance in demanding environments.

Maximum Collector-Emitter Voltage: 30 V

Supports a maximum voltage rating of 30 V, providing adequate headroom for various applications.

Transistor Element Material: SILICON

Silicon as the material ensures low thermal sensitivity and high performance, extending the lifespan of the transistor.

Maximum Turn On Time (ton): 430 ns

A fast turn-on time of 430 ns enhances the responsiveness of circuits, particularly in high-frequency applications.

Maximum Collector Current (IC): 3 A

The maximum collector current of 3 A offers a robust solution for applications requiring significant current handling.

Maximum Turn Off Time (toff): 400 ns

Quick turn-off time of 400 ns minimizes delays in switching applications, improving overall circuit efficiency.

Terminal Finish: MATTE TIN

Matte tin finish enhances solderability and corrosion resistance, ensuring reliable electrical connections.

Terminal Position: BOTTOM

Bottom terminal positioning allows for easier PCB placement and contributes to compact circuit layouts.

Nominal Transition Frequency (fT): 100 MHz

A nominal transition frequency of 100 MHz makes this transistor suitable for high-frequency applications, ensuring effective signal transmission.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) STX790A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

90

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

400 ns

Maximum Turn On Time (ton):

430 ns

Trade Compliance

STX790A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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