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SO692

STMicroelectronics

SO692 by STMicroelectronics

SO692 by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max collector-emitter voltage of 300V, power dissipation of 0.31W, and operates up to 150 °C. Its compact surface mount design makes it ideal for space-constrained circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 13,387 parts In-Stock

1+ parts

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13,387

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ComSIT Distribution GmbH

Germany . 2,752 parts In-Stock

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2,752

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Digiode

USA . 2,647 parts In-Stock

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2,647

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Anansix

USA . 2,466 parts In-Stock

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2,466

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 947 parts In-Stock

1+ parts

$0.784

100+ parts

-

1k+ parts

$0.705

10k+ parts

-

947

$0.784

-

$0.705

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Advanced Electronics

New Zealand . 88 parts In-Stock

1+ parts

$1.431

100+ parts

$1.302

1k+ parts

$1.173

10k+ parts

-

88

$1.431

$1.302

$1.173

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MKK Technologies

India . 1,335 parts In-Stock

1+ parts

$1.474

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1,335

$1.474

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DigiPath Technology Company

USA . 1,335 parts In-Stock

1+ parts

$1.474

100+ parts

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1,335

$1.474

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AZTECH Wire

Italy . 969 parts In-Stock

1+ parts

$15.500

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969

$15.500

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Kepictronics

USA . 306,000 parts In-Stock

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306,000

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Parana Technologies

USA . 1,006 parts In-Stock

1+ parts

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100+ parts

$0.937

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1,006

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$0.937

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Corphita

USA . 912 parts In-Stock

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912

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Overview

Unlock superior performance with the SO692 PNP transistor by STMicroelectronics, a trusted leader in semiconductor innovation. Designed for efficient switching applications, this compact and reliable device excels in diverse electronics, ensuring exceptional power management and durability even at elevated temperatures. Elevate your designs with unmatched quality and the peace of mind that comes from choosing a manufacturer renowned for excellence. Experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures lightweight construction and resistance to moisture and environmental factors.

Polarity or Channel Type: PNP

As a PNP transistor, it is well-suited for various applications that require high-current capabilities and can be easily integrated into circuits.

Configuration: SINGLE

The single configuration provides simplicity and ease of use in circuit design, making it a straightforward choice for many applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, it delivers fast response times, enhancing circuit efficiency.

Surface Mount: YES

Surface mount capability allows for compact design and facilitates automated assembly processes, reducing manufacturing costs.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space on PCBs, making it suitable for modern compact electronic designs.

Terminal Form: GULL WING

Gull wing terminals provide ease of soldering and improve mechanical stability, ensuring reliable connections.

No. of Terminals: 3

With three terminals, it enables straightforward connectivity and is versatile for various circuit configurations.

Maximum Power Dissipation (Abs): 0.31 W

The maximum power dissipation of 0.31 W allows the transistor to handle moderate power levels effectively without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style is ideal for space-constrained applications, facilitating integration into smaller devices.

Minimum DC Current Gain (hFE): 25

A minimum DC current gain of 25 indicates reliable amplification capabilities, making it suitable for a variety of applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, it ensures performance stability in high-temperature environments.

Maximum Collector-Emitter Voltage: 300 V

A high maximum collector-emitter voltage of 300 V expands its usability in high-voltage applications, enhancing its versatility.

Transistor Element Material: SILICON

Silicon material provides excellent electrical properties and reliability, making it a standard choice for electronic components.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1 A is ample for typical switching tasks, ensuring efficient operation in numerous applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish ensures good solderability and minimizes oxidation, resulting in a longer lifespan of connections.

Terminal Position: DUAL

Dual terminal positions improve layout flexibility, allowing for optimized routing and modified circuit designs.

Nominal Transition Frequency (fT): 50 MHz

A nominal transition frequency of 50 MHz allows for high-speed operation, making this transistor suitable for fast-switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SO692 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

25

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SO692 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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