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2STX1360

STMicroelectronics

2STX1360 by STMicroelectronics

2STX1360 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1W, collector current of 3A, and operates up to 150 °C. Ideal for efficient signal processing in compact electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,611 parts In-Stock

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5,611

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Anansix

USA . 2,260 parts In-Stock

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2,260

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Digiode

USA . 913 parts In-Stock

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913

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 497 parts In-Stock

1+ parts

$1.286

100+ parts

-

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$1.158

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497

$1.286

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$1.158

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Native Components

USA . 409 parts In-Stock

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$1.360

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409

$1.360

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Northwest PG Solutions

USA . 1,451 parts In-Stock

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$1.496

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1,451

$1.496

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MKK Technologies

India . 647 parts In-Stock

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$2.419

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647

$2.419

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DigiPath Technology Company

USA . 647 parts In-Stock

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$2.419

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647

$2.419

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AZTECH Wire

Italy . 288 parts In-Stock

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$19.040

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288

$19.040

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Ampacity Inc.

Singapore . 1,297 parts In-Stock

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$51.050

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1,297

$51.050

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A-Z Elektronik GmbH

Germany . 7,410 parts In-Stock

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7,410

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RC Electronics

USA . 7,097 parts In-Stock

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Corphita

USA . 4,691 parts In-Stock

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4,691

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Alle Elektronik GmbH

Germany . 3,658 parts In-Stock

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3,658

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Parana Technologies

USA . 655 parts In-Stock

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$1.538

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655

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$1.538

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Overview

Elevate your designs with the 2STX1360 from STMicroelectronics, a trusted leader in semiconductor innovation. This high-performance NPN transistor excels in switching applications, ensuring reliability and efficiency for your projects. Its robust construction and superior thermal characteristics make it ideal for various consumer electronics, automotive, and industrial applications. Unlock unparalleled value and performance — choose the 2STX1360 and experience the STMicroelectronics advantage today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides good durability and resistance to environmental factors, making it a reliable choice for various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in signal amplification and switching applications, making this product versatile and suitable for a wide range of circuits.

Configuration: SINGLE

A single configuration simplifies circuit design and reduces footprint, making it ideal for compact electronic devices.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently control electric currents, making it suitable for power management and control solutions.

Package Shape: ROUND

The round package shape facilitates efficient thermal management and is suited for through-hole applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and are effective for high-power applications, ensuring reliability in various environments.

No. of Terminals: 3

The three-terminal design is standard for BJTs, allowing easy integration into most electronic circuits.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1 W, this transistor can handle moderate power levels, making it suitable for many switching and amplification tasks.

Package Style (Meter): CYLINDRICAL

The cylindrical package style enhances thermal performance and allows for easy component placement on printed circuit boards (PCBs).

Minimum DC Current Gain (hFE): 160

A minimum DC current gain of 160 indicates good amplification capability, suitable for driving loads efficiently.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature of 150 °C ensures reliability and performance in demanding environments.

Maximum Collector-Emitter Voltage: 60 V

With a maximum collector-emitter voltage of 60 V, this transistor can be utilized in a variety of applications without risk of breakdown.

Transistor Element Material: SILICON

Silicon transistors offer robust performance characteristics and are standard in the industry, ensuring availability and compatibility.

Maximum Turn On Time (ton): 120 ns

A fast turn-on time of 120 ns makes this transistor suitable for high-speed switching applications.

Maximum Collector Current (IC): 3 A

With a maximum collector current of 3 A, it can handle significant currents, making it ideal for power applications.

Maximum Turn Off Time (toff): 785 ns

The turn-off time of 785 ns is acceptable for many applications, balancing performance with efficiency.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and helps prevent corrosion, ensuring long-lasting connections.

Terminal Position: BOTTOM

Bottom-positioned terminals simplify layout on PCBs and allow for efficient use of space in compact designs.

Nominal Transition Frequency (fT): 130 MHz

With a nominal transition frequency of 130 MHz, this transistor can efficiently handle high-frequency signals, making it good for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2STX1360 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

160

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

785 ns

Maximum Turn On Time (ton):

120 ns

Trade Compliance

2STX1360 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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