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2STX2360

STMicroelectronics

2STX2360 by STMicroelectronics

2STX2360 by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 1W, collector current of 3A, and operates up to 150 °C. Ideal for efficient circuit designs requiring fast response times.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,438 parts In-Stock

1+ parts

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2,438

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Digiode

USA . 1,056 parts In-Stock

1+ parts

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-

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1,056

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Vyrian

USA . 100 parts In-Stock

1+ parts

-

100+ parts

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 483 parts In-Stock

1+ parts

$0.283

100+ parts

-

1k+ parts

$0.255

10k+ parts

-

483

$0.283

-

$0.255

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MKK Technologies

India . 87 parts In-Stock

1+ parts

$0.533

100+ parts

-

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87

$0.533

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DigiPath Technology Company

USA . 87 parts In-Stock

1+ parts

$0.533

100+ parts

-

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87

$0.533

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-

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Native Components

USA . 699 parts In-Stock

1+ parts

$0.940

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699

$0.940

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Northwest PG Solutions

USA . 2,125 parts In-Stock

1+ parts

$1.034

100+ parts

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2,125

$1.034

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Parana Technologies

USA . 1,703 parts In-Stock

1+ parts

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100+ parts

$0.339

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1,703

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$0.339

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Corphita

USA . 102 parts In-Stock

1+ parts

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102

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Overview

Unlock the potential of your projects with the 2STX2360 from STMicroelectronics, a trusted leader in semiconductor innovation. This PNP transistor excels in switching applications, delivering exceptional performance and reliability in compact designs. With robust power dissipation and a wide operating temperature range, it ensures seamless operation in diverse environments. Experience enhanced efficiency and quality that translates into superior end products, making the 2STX2360 your ideal choice for performance-driven solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers durability and cost-effectiveness, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration in circuits that require this type of transistor for amplification or switching.

Configuration: SINGLE

A single configuration simplifies design and integration in simple circuits, ensuring efficiency in application.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor can efficiently manage power and control circuits.

Package Shape: ROUND

The round package shape contributes to a compact design, allowing for better space utilization on circuit boards.

Terminal Form: WIRE

Wire terminals provide a reliable connection for various mounting styles, enhancing performance in electronic applications.

No. of Terminals: 3

With three terminals, this transistor supports a wide range of circuit designs while maintaining simplicity.

Maximum Power Dissipation (Abs): 1 W

The power dissipation rating ensures that the transistor can handle sufficient power without overheating, making it reliable.

Package Style (Meter): CYLINDRICAL

The cylindrical package style aids in efficient thermal management and spatial arrangement on the PCB.

Minimum DC Current Gain (hFE): 160

A high minimum gain makes this transistor suitable for low-power applications, ensuring strong amplification.

Maximum Operating Temperature: 150 °C

The high-temperature tolerance ensures stable performance in demanding environments, ideal for industrial applications.

Maximum Collector-Emitter Voltage: 60 V

A significant voltage rating allows for versatility in applications across different circuits, providing design flexibility.

Transistor Element Material: SILICON

Silicon provides excellent electronic properties and reliability, making it a standard choice for BJTs.

Maximum Turn On Time (ton): 115 ns

Fast switching capabilities enhance performance in high-speed applications, minimizing delay in response.

Maximum Collector Current (IC): 3 A

The ability to handle up to 3 A of current makes this transistor suitable for power applications and higher loads.

Maximum Turn Off Time (toff): 400 ns

Efficient turn-off times ensure quick response in switching applications, essential for high-frequency environments.

Terminal Finish: MATTE TIN

The matte tin finish improves solderability and corrosion resistance, ensuring long-term reliability in connections.

Terminal Position: BOTTOM

Bottom terminal positioning allows for optimized layout in PCBs, leading to better performance in compact designs.

Nominal Transition Frequency (fT): 130 MHz

A high transition frequency indicates potential for use in RF applications, making it suitable for advanced circuitry.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2STX2360 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

160

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

400 ns

Maximum Turn On Time (ton):

115 ns

Trade Compliance

2STX2360 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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