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2DD1664P-13

Diodes Incorporated

2DD1664P-13 by Diodes Incorporated

2DD1664P-13 by Diodes Inc. is a NPN BJT transistor with max power dissipation of 1W, hFE of 82, and fT of 280MHz. Ideal for switching applications, it has a max collector-emitter voltage of 32V and max collector current of 1A. Suitable for surface mount with single terminal position in small outline package style.

Median Price

$0.100

Lifecycle Status

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In-Stock Inventory

1k+

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Verical

USA . 305,000 parts In-Stock

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$0.100

Avnet

USA . 2,500 parts In-Stock

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2,500

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IBS Electronics

USA . 82,500 parts In-Stock

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$0.127

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NAC Semi

USA . 65,000 parts In-Stock

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$0.214

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Vyrian

USA . 12,698 parts In-Stock

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Advanced Electronics

New Zealand . 200 parts In-Stock

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$0.994

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$0.905

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$0.815

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200

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Corohmni

South Africa . 484 parts In-Stock

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$1.274

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AZTECH Wire

Italy . 1,183 parts In-Stock

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Perfect Parts

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Eastek

USA . 5,000 parts In-Stock

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Authorized Procurement Solutions

USA . 2,538 parts In-Stock

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Northwest PG Solutions

USA . 1,981 parts In-Stock

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Native Components

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Overview

Enhance your electronic projects with the 2DD1664P-13 by Diodes Incorporated. As a leading manufacturer in small signal bipolar junction transistors, Diodes Incorporated delivers top-notch quality and reliability. This NPN transistor is perfect for switching applications, offering a maximum power dissipation of 1W and a collector-emitter voltage of 32V. With a minimum DC current gain of 82 and a nominal transition frequency of 280 MHz, this transistor provides excellent performance. Upgrade your designs with the 2DD1664P-13 and experience the benefits of high-quality components from Diodes Incorporated.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, ideal for small signal applications.

Polarity or Channel Type: NPN

Commonly used type for switching applications.

Configuration: SINGLE

Simplified design for ease of use.

Transistor Application: SWITCHING

Designed specifically for switching purposes.

Surface Mount: YES

Suitable for automated assembly processes.

Package Shape: RECTANGULAR

Space-efficient design for compact circuit layouts.

Terminal Form: FLAT

Convenient for soldering and PCB mounting.

No. of Terminals: 3

Simple interface for connection.

Maximum Power Dissipation (Abs): 1 W

Sufficient power handling capability for various applications.

Package Style (Meter): SMALL OUTLINE

Compact package size for space-constrained designs.

Minimum DC Current Gain (hFE): 82

Consistent and reliable amplification performance.

Maximum Operating Temperature: 150 °C

Can withstand elevated temperatures during operation.

Maximum Collector-Emitter Voltage: 32 V

Suitable for low voltage applications.

Transistor Element Material: SILICON

High-quality material for improved efficiency and reliability.

Maximum Collector Current (IC): 1 A

Adequate current handling capacity for small signal applications.

Terminal Finish: MATTE TIN

Corrosion-resistant finish for long-term reliability.

Terminal Position: SINGLE

Simplified pin configuration for easy connection.

Case Connection: COLLECTOR

Clear indication of terminal functions for correct circuit connection.

Maximum Time At Peak Reflow Temperature (s): 30

Efficient soldering process for manufacturing.

Peak Reflow Temperature °C: 260

High temperature tolerance for reflow soldering.

Nominal Transition Frequency (fT): 280 MHz

Fast switching speed for responsive performance in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2DD1664P-13 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

32 V

Configuration:

Minimum DC Current Gain (hFE):

82

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2DD1664P-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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