Loading...

2DD1664R-13

Diodes Incorporated

2DD1664R-13 by Diodes Incorporated

2DD1664R-13 by diodes incorporated is a NPN BJT transistor with 1W power dissipation, hFE of 180, and 32V VCE max. Ideal for switching applications in small outline packages, it operates up to 150°C with a transition frequency of 280MHz.

Median Price

$0.470

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,470 parts In-Stock

1+ parts

$0.470

100+ parts

$0.218

1k+ parts

$0.137

10k+ parts

-

2,470

$0.470

$0.218

$0.137

-

Mouser Electronics

USA . 1,378 parts In-Stock

1+ parts

$0.480

100+ parts

$0.221

1k+ parts

$0.142

10k+ parts

$0.115

1,378

$0.480

$0.221

$0.142

$0.115

Verical

USA . 2,602,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.100

2,602,500

-

-

-

$0.100

Avnet

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,500

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semtec, LLC

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

NAC Semi

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.134

2,500

-

-

-

$0.134

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 4,579,536 parts In-Stock

1+ parts

$0.460

100+ parts

$0.210

1k+ parts

$0.130

10k+ parts

$0.100

4,579,536

$0.460

$0.210

$0.130

$0.100

Native Components

USA . 872 parts In-Stock

1+ parts

$1.810

100+ parts

-

1k+ parts

-

10k+ parts

-

872

$1.810

-

-

-

Northwest PG Solutions

USA . 614 parts In-Stock

1+ parts

$1.991

100+ parts

-

1k+ parts

-

10k+ parts

-

614

$1.991

-

-

-

Metaverse IC Inc.

Canada . 306,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

306,000

-

-

-

-

Perfect Parts

USA . 29,757 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

29,757

-

-

-

-

Authorized Procurement Solutions

USA . 25,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

25,000

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 14,019 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

14,019

-

-

-

-

Lixinc

USA . 11,045 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,045

-

-

-

-

Kepictronics

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,000

-

-

-

-

Eastek

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,500

-

-

-

-

Overview

Unleash the power of cutting-edge technology with the 2DD1664R-13 from Diodes Incorporated. This Small Signal Bipolar Junction Transistor (BJT) offers unparalleled quality and reliability, making it the ideal choice for a wide range of switching applications. With a maximum collector-emitter voltage of 32V and a minimum DC current gain of 180, this NPN transistor delivers exceptional performance in a compact, surface-mount package. Trust Diodes Incorporated to provide you with the innovative solutions you need to stay ahead in today's fast-paced world. Elevate your projects with the 2DD1664R-13 and experience the difference firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the package durable and resistant to external factors, ensuring the longevity of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product suitable for a wide range of circuit designs.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1 W, this transistor can handle relatively high power levels, making it suitable for switching applications.

Maximum Collector-Emitter Voltage: 32 V

The high maximum collector-emitter voltage allows this transistor to be used in circuits with higher voltage requirements.

Nominal Transition Frequency (fT): 280 MHz

With a high transition frequency, this transistor can operate at high frequencies, making it suitable for fast switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2DD1664R-13 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

32 V

Configuration:

Minimum DC Current Gain (hFE):

180

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2DD1664R-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 6