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2N4125TFR

Fairchild Semiconductor

2N4125TFR by Fairchild Semiconductor

2N4125TFR by Fairchild Semiconductor is a PNP BJT transistor with a max collector-emitter voltage of 30V and max current of 0.2A. It has a min DC current gain of 25, making it suitable for switching applications with a max power dissipation of 0.35W in cylindrical package style.

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Overview

Elevate your electronic projects with the 2N4125TFR by Fairchild Semiconductor. Crafted with precision and quality, this Small Signal Bipolar Junction Transistor (BJT) offers exceptional performance and reliability. Ideal for switching applications, this PNP transistor provides a seamless and efficient solution for your circuit design needs. With a maximum power dissipation of 0.35W and a minimum DC current gain of 25, this transistor delivers optimal performance while maintaining a compact size. Trust in Fairchild Semiconductor's expertise and innovation to bring value and advantage to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the transistor suitable for a variety of applications without adding excessive weight or cost.

Polarity or Channel Type: PNP

PNP transistors are commonly used for switching applications, making this transistor well-suited for applications where switching between on and off states is required.

Configuration: SINGLE

The single configuration simplifies the design and implementation of circuits, making it easier to integrate this transistor into a wider range of electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers optimized performance in these types of circuits, ensuring reliable and efficient operation.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for easier manual soldering and provides a sturdy connection, making it ideal for hand-soldered prototyping or applications where a strong mechanical connection is required.

Maximum Power Dissipation (Abs): 0.35 W

With a maximum power dissipation of 0.35 W, this transistor can handle a moderate amount of power without overheating, making it suitable for a wide range of low to medium power applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures that this transistor can perform reliably in a variety of operating conditions, making it suitable for applications that may encounter higher temperatures.

Maximum Collector-Emitter Voltage: 30 V

The high maximum collector-emitter voltage of 30 V allows this transistor to be used in circuits that require higher voltage handling capabilities, expanding its range of potential applications.

Minimum DC Current Gain (hFE): 25

The minimum DC current gain of 25 ensures consistent and stable transistor performance in various operating conditions, making it a reliable choice for applications that require a predictable amplification factor.

Maximum Collector Current (IC): 0.2 A

With a maximum collector current of 0.2 A, this transistor can handle moderate current levels, making it suitable for applications that require amplification or switching of low to medium currents.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N4125TFR attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Fairchild Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N4125TFR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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