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SINGLE Small Signal Bipolar Junction Transistors (BJT) 956

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BC807-16-7 by Diodes Incorporated

BC807-16-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .5 A;

.5 A

12 pF

45 V

SINGLE

60

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.31 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.7 V

BC807-25-7 by Diodes Incorporated

BC807-25-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .5 A;

.5 A

12 pF

45 V

SINGLE

100

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.31 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.7 V

BC807-40-7 by Diodes Incorporated

BC807-40-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .5 A;

.5 A

12 pF

45 V

SINGLE

170

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.31 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.7 V

2SC4098T106P by ROHM

2SC4098T106P

ROHM

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;

.05 A

2.2 pF

25 V

SINGLE

82

R-PDSO-G3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

GULL WING

DUAL

10

AMPLIFIER

SILICON

300 MHz

.3 V

2SC1741ASTPQ by ROHM

2SC1741ASTPQ

ROHM

ROHM 2SC1741ASTPQ is a NPN BJT transistor with max. power dissipation of 0.3W, hFE of 120, and fT of 250MHz. Ideal for switching applications due to its max. collector-emitter voltage of 50V and max. collector current of 0.5A in a through-hole package style.

.5 A

50 V

SINGLE

120

R-PSIP-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

.3 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

250 MHz

SO642 by STMicroelectronics

SO642

STMicroelectronics

SO642 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max collector-emitter voltage of 300V, power dissipation of 0.31W, and operates up to 150 °C. Its compact surface mount design makes it ideal for space-constrained circuits.

.1 A

300 V

SINGLE

40

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

.31 W

Not Qualified

Other Transistors

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

50 MHz

SO692 by STMicroelectronics

SO692

STMicroelectronics

SO692 by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max collector-emitter voltage of 300V, power dissipation of 0.31W, and operates up to 150 °C. Its compact surface mount design makes it ideal for space-constrained circuits.

.1 A

300 V

SINGLE

25

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.31 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

50 MHz

BF494D27Z by National Semiconductor

BF494D27Z

National Semiconductor

BF494D27Z by National Semiconductor is a NPN BJT with hFE of 65. It has a single configuration and comes in a cylindrical package. Ideal for low-power applications in electronics due to its silicon transistor element material and through-hole terminal form.

SINGLE

65

TO-92

O-PBCY-T3

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

Not Qualified

NO

THROUGH-HOLE

BOTTOM

SILICON

BF494D74Z by National Semiconductor

BF494D74Z

National Semiconductor

BF494D74Z by National Semiconductor is a NPN BJT with hFE of 65. It has a single configuration and comes in a cylindrical package. Ideal for low-power applications like amplifiers and oscillators due to its small signal capabilities.

SINGLE

65

TO-92

O-PBCY-T3

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

Not Qualified

NO

THROUGH-HOLE

BOTTOM

SILICON

2SA1797T100/Q by ROHM

2SA1797T100/Q

ROHM

ROHM 2SA1797T100/Q is a PNP BJT transistor with max. collector-emitter voltage of 50V and max. collector current of 3A. It has a min. DC current gain of 120, ideal for amplifier applications due to its high transition frequency of 200MHz and small outline package style.

COLLECTOR

3 A

50 V

SINGLE

120

R-PSSO-F3

e2

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Not Qualified

Other Transistors

YES

Tin/Copper (Sn/Cu)

FLAT

SINGLE

10

AMPLIFIER

SILICON

200 MHz

MMSTA28T146 by ROHM

MMSTA28T146

ROHM

ROHM MMSTA28T146 is a NPN BJT transistor with max VCEsat of 1.5V, hFE of 10000, and fT of 200MHz. Ideal for amplifier applications due to its small outline package style and high transition frequency. Suitable for surface mount designs with Gull Wing terminals and operates up to 150°C.

.3 A

8 pF

80 V

SINGLE

10000

R-PDSO-G3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

GULL WING

DUAL

10

AMPLIFIER

SILICON

200 MHz

1.5 V

2SB1181TL/Q by ROHM

2SB1181TL/Q

ROHM

ROHM's 2SB1181TL/Q is a PNP BJT transistor with VCEsat of 0.4V, hFE of 120, and IC of 1A. Ideal for switching applications, it has a max operating temp of 150°C and can handle power dissipation up to 10W in a small outline package.

COLLECTOR

1 A

80 V

SINGLE

120

R-PSSO-G2

e2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

10 W

10 W

Not Qualified

Other Transistors

YES

TIN COPPER

GULL WING

SINGLE

10

SWITCHING

SILICON

100 MHz

.4 V

2N3859AD75Z by Fairchild Semiconductor

2N3859AD75Z

Fairchild Semiconductor

2N3859AD75Z by Fairchild Semiconductor is a NPN bipolar junction transistor with a max collector-emitter voltage of 60V and a max collector current of 0.5A. It has a min DC current gain of 100, making it suitable for switching applications. With a nominal transition frequency of 90MHz, this transistor is ideal for high-frequency operations in various electronic circuits.

.5 A

60 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.2 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

90 MHz

ZTX1053ASTZ by Zetex Plc

ZTX1053ASTZ

Zetex Plc

ZTX1053ASTZ by Zetex Plc is a NPN BJT transistor with hFE of 100, VCE of 75V, and IC of 3A. Ideal for small signal applications in electronics due to its high transition frequency of 140MHz. Its cylindrical package with wire terminals makes it suitable for various circuit configurations.

3 A

75 V

SINGLE

100

O-PBCY-W3

e3

1

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

NO

MATTE TIN

WIRE

BOTTOM

10

SILICON

140 MHz

PN4249D74Z by Fairchild Semiconductor

PN4249D74Z

Fairchild Semiconductor

Fairchild Semiconductor's PN4249D74Z is a PNP BJT transistor with 3 terminals. It has a max power dissipation of 0.6W and can handle up to 0.5A collector current. Ideal for switching applications, it operates at temperatures up to 150°C in a round package with matte tin finish.

.5 A

60 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.6 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

DN0150ALP4-7B by Diodes Incorporated

DN0150ALP4-7B

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;

HIGH RELIABILITY

COLLECTOR

.1 A

50 V

SINGLE

120

R-PBCC-N3

e4

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

NPN

.45 W

Not Qualified

Other Transistors

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

SILICON

60 MHz

DN0150BLP4-7B by Diodes Incorporated

DN0150BLP4-7B

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;

HIGH RELIABILITY

COLLECTOR

.1 A

50 V

SINGLE

200

R-PBCC-N3

e4

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

NPN

.45 W

Not Qualified

Other Transistors

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

SILICON

60 MHz

DP0150ALP4-7B by Diodes Incorporated

DP0150ALP4-7B

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;

HIGH RELIABILITY

COLLECTOR

.1 A

50 V

SINGLE

120

R-PBCC-N3

e4

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

PNP

.45 W

Not Qualified

Other Transistors

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

SILICON

80 MHz

DP0150BLP4-7B by Diodes Incorporated

DP0150BLP4-7B

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;

HIGH RELIABILITY

COLLECTOR

.1 A

50 V

SINGLE

200

R-PBCC-N3

e4

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

PNP

.45 W

Not Qualified

Other Transistors

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

SILICON

80 MHz

FMMT619-TP by Micro Commercial Components

FMMT619-TP

Micro Commercial Components

FMMT619-TP by Micro Commercial Components is a NPN BJT transistor with hFE of 100, VCE of 50V, and IC of 2A. Ideal for small outline applications requiring high transition frequency up to 100MHz in surface mount configurations.

2 A

50 V

SINGLE

100

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

MATTE TIN

GULL WING

DUAL

10

SILICON

100 MHz

2SB1386T100R by ROHM

2SB1386T100R

ROHM

ROHM 2SB1386T100R is a PNP BJT transistor with VCEsat of 1V, hFE of 180, and IC of 5A. Ideal for switching applications, it has a max operating temp of 150°C and fT of 120MHz. Its small outline package makes it suitable for surface mount designs.

COLLECTOR

5 A

20 V

SINGLE

180

R-PSSO-F3

e2

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

2 W

Not Qualified

Other Transistors

YES

Tin/Copper (Sn/Cu)

FLAT

SINGLE

10

SWITCHING

SILICON

120 MHz

1 V

2SB1184TLQ by ROHM

2SB1184TLQ

ROHM

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 70 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 3 A;

3 A

50 V

SINGLE

120

R-PSSO-G2

e2

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

15 W

Not Qualified

Other Transistors

YES

Tin/Copper (Sn98Cu2)

GULL WING

SINGLE

10

SWITCHING

SILICON

70 MHz

2SA1579T106R by ROHM

2SA1579T106R

ROHM

ROHM's 2SA1579T106R is a PNP small signal BJT transistor with a max VCEsat of 0.5V and a min DC current gain (hFE) of 180. It is commonly used as an amplifier in various applications.

.05 A

120 V

SINGLE

180

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

AMPLIFIER

SILICON

140 MHz

.5 V

2SA1727TLQ by ROHM

2SA1727TLQ

ROHM

ROHM 2SA1727TLQ is a PNP BJT transistor with max. collector-emitter voltage of 400V and max. power dissipation of 10W. With hFE of min. 120, it's ideal for switching applications in small outline packages at up to 150°C operating temperature.

.5 A

400 V

SINGLE

120

R-PSSO-G2

e2

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

10 W

Not Qualified

Other Transistors

YES

Tin/Copper (Sn98Cu2)

GULL WING

SINGLE

10

SWITCHING

SILICON

12 MHz

2SC5001TLQ by ROHM

2SC5001TLQ

ROHM

ROHM 2SC5001TLQ is a NPN BJT transistor with max. power dissipation of 10W, hFE of 120, and fT of 150MHz. Ideal for switching applications in small outline packages due to its high collector current and voltage capabilities.

10 A

20 V

SINGLE

120

R-PSSO-G2

e2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

10 W

Not Qualified

Other Transistors

YES

TIN COPPER

GULL WING

SINGLE

10

SWITCHING

SILICON

150 MHz

2SC5053T100Q by ROHM

2SC5053T100Q

ROHM

ROHM 2SC5053T100Q is a NPN BJT transistor for switching applications. Features include VCEsat of 0.4V, hFE of 120, and IC of 1A. Suitable for surface mount designs with a max operating temperature of 150°C.

COLLECTOR

1 A

50 V

SINGLE

120

R-PSSO-F3

e2

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

2 W

Not Qualified

Other Transistors

YES

Tin/Copper (Sn/Cu)

FLAT

SINGLE

10

SWITCHING

SILICON

150 MHz

.4 V

2SD2153T100V by ROHM

2SD2153T100V

ROHM

ROHM 2SD2153T100V is a NPN BJT transistor with max VCEsat of 0.5V, hFE of 820, and IC of 2A. Ideal for amplifier applications due to its high transition frequency of 110MHz and low power dissipation. Features single configuration in a small outline package suitable for surface mount technology.

COLLECTOR

2 A

25 V

SINGLE

820

R-PSSO-F3

e2

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

.5 W

Not Qualified

Other Transistors

YES

Tin/Copper (Sn/Cu)

FLAT

SINGLE

10

AMPLIFIER

SILICON

110 MHz

.5 V

BC858BWT106 by ROHM

BC858BWT106

ROHM

ROHM BC858BWT106 is a PNP BJT with 30V VCEO, 0.1A IC, and 210 hFE. Ideal for small signal applications in electronics due to its 250MHz fT, Gull Wing terminals, and compact Small Outline package. With a max operating temp of 150°C, it's suitable for various surface mount designs.

.1 A

30 V

SINGLE

210

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.35 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

SILICON

250 MHz

2SD2144STPW by ROHM

2SD2144STPW

ROHM

ROHM 2SD2144STPW is a NPN BJT transistor with max. power dissipation of 0.3W and min. DC current gain of 1200, ideal for low-power applications. With a max. collector-emitter voltage of 20V and max. collector current of 0.5A, it operates up to 150°C making it suitable for various electronic circuits requiring high frequency operation up to 350MHz in an in-line package style.

.5 A

20 V

SINGLE

1200

R-PSIP-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

NPN

.3 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

350 MHz

2SD1757KT146R by ROHM

2SD1757KT146R

ROHM

ROHM 2SD1757KT146R is a NPN BJT transistor with max. collector-emitter voltage of 15V, ideal for switching applications. Features include min. DC current gain of 180 and max. operating temp of 150°C. Its small outline package with gull wing terminals makes it suitable for surface mount designs in various electronic circuits.

.5 A

15 V

SINGLE

180

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

Tin/Silver/Copper (Sn/Ag/Cu)

GULL WING

DUAL

10

SWITCHING

SILICON

150 MHz

2SD2226KT146W by ROHM

2SD2226KT146W

ROHM

ROHM 2SD2226KT146W is a NPN BJT transistor with max. collector-emitter voltage of 50V and max. collector current of 0.15A. It has a min. DC current gain of 1200, suitable for small signal applications in electronics due to its high transition frequency of 250MHz. The Gull Wing terminal form and small outline package make it ideal for surface mount designs requiring compact components.

.15 A

50 V

SINGLE

1200

R-PDSO-G3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

SILICON

250 MHz

2SD1760TLQ by ROHM

2SD1760TLQ

ROHM

ROHM 2SD1760TLQ is a NPN BJT transistor with max. power dissipation of 15W and max. collector current of 3A. Ideal for switching applications, it has a min. DC current gain of 120 (hFE) and operates up to 150°C. Its small outline package makes it suitable for surface mount designs in various electronic circuits.

3 A

50 V

SINGLE

120

R-PSSO-G2

e2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

15 W

Not Qualified

Other Transistors

YES

Tin/Copper (Sn/Cu)

GULL WING

SINGLE

10

SWITCHING

SILICON

90 MHz

2SD1664T100Q by ROHM

2SD1664T100Q

ROHM

ROHM 2SD1664T100Q is a NPN BJT transistor with VCEsat of 0.4V, hFE of 120, and IC of 1A. Ideal for switching applications in small outline packages, it operates up to 150°C with a max voltage of 32V.

COLLECTOR

1 A

32 V

SINGLE

120

R-PSSO-F3

e2

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

2 W

Not Qualified

Other Transistors

YES

Tin/Copper (Sn/Cu)

FLAT

SINGLE

10

SWITCHING

SILICON

150 MHz

.4 V

MMST2222AT146 by ROHM

MMST2222AT146

ROHM

ROHM MMST2222AT146 is a NPN BJT transistor for switching applications. Features include VCEsat of 0.6V, hFE of 40, and IC of 0.6A. With a max operating temperature of 150°C, it has a transition frequency of 300MHz making it suitable for high-speed switching circuits.

.6 A

7 pF

40 V

SINGLE

40

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

SWITCHING

SILICON

300 MHz

285 ns

35 ns

.6 V

MMST3904T146 by ROHM

MMST3904T146

ROHM

ROHM MMST3904T146 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 30, and IC of 0.2A. Ideal for switching applications due to its fast turn on/off times (ton: 70ns, toff: 250ns) and high transition frequency (fT: 300MHz). Suitable for surface mount designs in small outline packages.

.2 A

4 pF

40 V

SINGLE

30

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.35 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

SWITCHING

SILICON

300 MHz

250 ns

70 ns

.3 V

MMSTA06T146 by ROHM

MMSTA06T146

ROHM

ROHM MMSTA06T146 is a NPN BJT transistor with VCEsat of 0.25V, hFE of 100, and IC of 0.5A. Ideal for amplifier applications due to its small outline package style and high transition frequency of 100MHz. Features gull wing terminals in a plastic/epoxy body for surface mount assembly.

.5 A

80 V

SINGLE

100

R-PDSO-G3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

GULL WING

DUAL

10

AMPLIFIER

SILICON

100 MHz

.25 V

BCX6825H6327XTSA1 by Infineon Technologies

BCX6825H6327XTSA1

Infineon Technologies

BCX6825H6327XTSA1 by Infineon is a NPN BJT transistor with 3W power dissipation, hFE of 160, and 20V collector-emitter voltage. It's used as an amplifier in applications requiring a small outline package style for surface mount assembly.

COLLECTOR

1 A

20 V

SINGLE

160

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

3 W

AEC-Q101

Other Transistors

YES

Tin (Sn)

FLAT

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

100 MHz

STBV42-AP by STMicroelectronics

STBV42-AP

STMicroelectronics

STBV42-AP by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient circuit designs in various electronic devices.

1 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STBV42G-AP by STMicroelectronics

STBV42G-AP

STMicroelectronics

STBV42G-AP by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max collector-emitter voltage of 400V, power dissipation of 1W, and operates up to 150 °C. Ideal for efficient circuit designs in various electronic devices.

1 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STBV42G by STMicroelectronics

STBV42G

STMicroelectronics

STBV42G by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for various electronic circuits requiring reliable performance.

1 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STX13003G by STMicroelectronics

STX13003G

STMicroelectronics

STX13003G by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1.5W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient circuit designs in various electronics.

1 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

4700 ns

MMBT3904TT1 by Onsemi

MMBT3904TT1

Onsemi

MMBT3904TT1 by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 40V, DC current gain of 30, and transition frequency of 300MHz. With a small outline package style and Gull Wing terminal form, it operates at up to 150°C.

.2 A

40 V

SINGLE

30

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.15 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

AMPLIFIER

SILICON

300 MHz

250 ns

70 ns

BC847BTT1 by Onsemi

BC847BTT1

Onsemi

BC847BTT1 by Onsemi is a NPN BJT transistor with 3 terminals, hFE of 200, and max. power dissipation of 0.15W. Ideal for amplifier applications, it operates at up to 150 °C, with Vce(max) of 45V.

.1 A

45 V

SINGLE

200

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.15 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

AMPLIFIER

SILICON

100 MHz

BC847CTT1 by Onsemi

BC847CTT1

Onsemi

BC847CTT1 by Onsemi is a NPN BJT transistor with 3 terminals. It has a max power dissipation of 0.15W and min DC current gain of 420. Ideal for amplifier applications, it operates at up to 150°C with a max collector-emitter voltage of 45V.

.1 A

45 V

SINGLE

420

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

BC857BTT1 by Onsemi

BC857BTT1

Onsemi

BC857BTT1 by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 45V, max collector current of 0.1A, and transition frequency of 100MHz. This small outline package with Gull Wing terminals operates up to 150°C, making it suitable for various electronic designs.

.1 A

45 V

SINGLE

220

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

.125 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

AMPLIFIER

SILICON

100 MHz

BFN19H6327XTSA1 by Infineon Technologies

BFN19H6327XTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .2 A; JESD-30 Code: R-PSSO-F3;

COLLECTOR

.2 A

300 V

SINGLE

30

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101

YES

TIN

FLAT

SINGLE

SWITCHING

SILICON

100 MHz

STBV42 by STMicroelectronics

STBV42

STMicroelectronics

STBV42 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V, ideal for switching applications. It has a max. power dissipation of 1W and max. collector current of 1A, suitable for low-power circuits in various electronic devices. The package style is cylindrical with matte tin terminal finish, making it easy to integrate into through-hole PCB designs.

1 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STBV45 by STMicroelectronics

STBV45

STMicroelectronics

STBV45 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V and max. collector current of 0.75A. It has a min. DC current gain of 5, suitable for switching applications with max. power dissipation of 0.95W in cylindrical package shape.

.75 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.95 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON