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2SD2153T100V

ROHM

2SD2153T100V by ROHM

ROHM 2SD2153T100V is a NPN BJT transistor with max VCEsat of 0.5V, hFE of 820, and IC of 2A. Ideal for amplifier applications due to its high transition frequency of 110MHz and low power dissipation. Features single configuration in a small outline package suitable for surface mount technology.

Median Price

$0.339

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$0.830

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$0.440

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Verical

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Chip1Stop

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$0.267

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CoreStaff

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$0.540

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$0.259

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$0.212

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Ampacity Inc.

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Overview

Unlock the full potential of your electronic projects with the 2SD2153T100V by ROHM. Manufactured with precision and reliability in mind, this small signal bipolar junction transistor offers exceptional performance in amplifier applications. With its NPN polarity and maximum VCEsat of 0.5V, this transistor provides superior functionality and efficiency. Whether you're a hobbyist or a professional, the value and benefits of the 2SD2153T100V are undeniable. Trust ROHM to deliver quality products that elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it versatile for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplifies circuit design and makes it easy to use in single transistor applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in such circuits.

Maximum VCEsat: 0.5 V

Low saturation voltage helps to minimize power loss and improve efficiency in amplifier circuits.

Package Shape: RECTANGULAR

Rectangular shape allows for easy PCB mounting and placement in compact spaces.

Maximum Power Dissipation (Abs): 0.5 W

Moderate power dissipation capability allows for reliable performance in various applications.

Nominal Transition Frequency (fT): 110 MHz

High transition frequency ensures fast switching and response times, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SD2153T100V attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

820

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

2 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Copper (Sn/Cu)

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

2SD2153T100V Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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