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2SD2470TP

ROHM

2SD2470TP by ROHM

ROHM's 2SD2470TP is a NPN BJT transistor with max. power dissipation of 0.4W, hFE of 270, and fT of 170MHz. Ideal for switching applications due to its max. collector current of 5A and operating temp. up to 150°C. Package style is cylindrical with through-hole terminals for easy installation.

Median Price

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2

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1k+

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France . 1,000 parts In-Stock

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Nova Conductors

Japan . 870 parts In-Stock

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870

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Argo Parts USA

USA . 5,660 parts In-Stock

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Continental Prestige Electronics

USA . 1,750 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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Overview

Discover the superior performance and reliability of the 2SD2470TP by ROHM, a leading manufacturer in the industry. This NPN bipolar junction transistor is perfect for switching applications, offering a minimum DC current gain of 270 and a maximum collector current of 5A. With a maximum operating temperature of 150°C and a nominal transition frequency of 170MHz, this transistor ensures efficient and stable operation. Trust ROHM's innovative technology to deliver exceptional quality and value in every product, making the 2SD2470TP an ideal choice for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and good insulation for the transistor, making it suitable for various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering reliable performance.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in different electronic projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation in various circuits.

Maximum Power Dissipation (Abs): 0.4 W

With a maximum power dissipation of 0.4 W, this transistor can handle moderate power levels without overheating.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures up to 150°C, suitable for demanding industrial applications.

Maximum Collector-Emitter Voltage: 10 V

Allows for a maximum collector-emitter voltage of 10 V, making it suitable for low voltage applications.

Maximum Collector Current (IC): 5 A

With a maximum collector current of 5 A, this transistor can handle high current loads in various circuits.

Nominal Transition Frequency (fT): 170 MHz

High nominal transition frequency of 170 MHz allows for fast switching speeds and high-frequency operation in electronic circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SD2470TP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

10 V

Configuration:

Minimum DC Current Gain (hFE):

270

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD2470TP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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