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2SD2705STP

ROHM

2SD2705STP by ROHM

ROHM's 2SD2705STP is a NPN BJT transistor with max. power dissipation of 0.3W, hFE of 820, and fT of 35MHz. Ideal for amplifier applications due to its single configuration and max. collector current of 0.3A at an operating temp of up to 150°C in a cylindrical package with through-hole terminals.

Median Price

$0.092

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Verical

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Ampacity Inc.

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AZTECH Wire

Italy . 1,177 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Overview

Enhance your electronics projects with the 2SD2705STP by ROHM. Known for their high-quality components, ROHM delivers reliable small signal bipolar junction transistors that excel in amplifier applications. With a maximum power dissipation of 0.3 W and a minimum DC current gain of 820, this NPN transistor offers exceptional performance. Whether you're a hobbyist or a professional, trust ROHM to provide the value and reliability you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material offers good protection for the transistor, ensuring durability and long-lasting performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easy to incorporate into various amplifier circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and reliability in such circuits.

Maximum Power Dissipation (Abs): 0.3 W

With a high maximum power dissipation, this transistor can handle power efficiently and effectively in amplifier circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for reliable performance even in demanding conditions.

Maximum Collector-Emitter Voltage: 20 V

The high maximum collector-emitter voltage provides flexibility in voltage requirements for amplifier circuits.

Minimum DC Current Gain (hFE): 820

With a high minimum DC current gain, this transistor offers high amplification capabilities for better signal processing.

Nominal Transition Frequency (fT): 35 MHz

The high nominal transition frequency allows for efficient signal amplification and processing in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SD2705STP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

820

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD2705STP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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