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2SD2114KT146W

ROHM

2SD2114KT146W by ROHM

ROHM 2SD2114KT146W is a NPN BJT transistor with VCEsat of 0.4V, hFE of 1200, and fT of 350MHz. Ideal for amplifier applications due to its high gain and frequency capabilities. Features GULL WING terminals in a SMALL OUTLINE package for surface mount assembly.

Median Price

$0.298

Lifecycle Status

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9

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1k+

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DigiKey

USA . 8,440 parts In-Stock

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$0.430

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$0.166

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$0.110

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$0.080

8,440

$0.430

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$0.080

Mouser Electronics

USA . 4,420 parts In-Stock

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$0.430

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$0.167

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$0.111

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$0.071

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$0.430

$0.167

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$0.071

Chip1Stop

Japan . 39,833 parts In-Stock

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$0.165

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$0.083

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Verical

USA . 3,000 parts In-Stock

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$0.128

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NAC Semi

USA . 33,000 parts In-Stock

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PC Components Company LLC

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Bristol Electronics

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Nova Conductors

Japan . 1,000 parts In-Stock

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VNN

France . 650 parts In-Stock

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Ampacity Inc.

Singapore . 20,621 parts In-Stock

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$0.074

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Epart123

USA . 30,000 parts In-Stock

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GreenTree Electronics

Israel . 30,000 parts In-Stock

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Perfect Parts

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Argo Parts USA

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Continental Prestige Electronics

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Kepictronics

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Glotronic Ltd.

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Aranea Global

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Overview

Discover the power of innovation with the 2SD2114KT146W by ROHM. As a leading manufacturer in the electronics industry, ROHM delivers top-quality Small Signal Bipolar Junction Transistors designed for applications like amplifiers. With a maximum power dissipation of 0.3W and a minimum DC current gain of 1200, this NPN transistor offers exceptional performance and reliability. Its compact design and high operating temperature make it perfect for various electronic projects. Experience the value and benefits that ROHM's 2SD2114KT146W brings to your next venture.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and other electronic circuits, making this product versatile and widely compatible.

Maximum VCEsat: 0.4 V

Low VCEsat helps reduce power consumption and heat generation in the circuit, making the transistor energy-efficient.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand demanding conditions without losing performance.

Nominal Transition Frequency (fT): 350 MHz

High fT value indicates that this transistor is capable of handling high-frequency signals, suitable for amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SD2114KT146W attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

1200

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

2SD2114KT146W Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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