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2SB1184TLQ

ROHM

2SB1184TLQ by ROHM

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 70 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 3 A;

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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ComSIT Distribution GmbH

Germany . 10,000 parts In-Stock

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ComSIT USA

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Vyrian

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Nova Conductors

Japan . 66 parts In-Stock

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Semtec, LLC

USA . 35 parts In-Stock

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Ampacity Inc.

Singapore . 2,098 parts In-Stock

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AZTECH Wire

Italy . 723 parts In-Stock

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Aranea Global

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SB1184TLQ attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Copper (Sn98Cu2)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SB1184TLQ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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