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2SB1316TL

ROHM

2SB1316TL by ROHM

ROHM 2SB1316TL is a PNP BJT with Darlington configuration, built-in diode and resistor. Ideal for amplifier applications, it has VCEsat of 1.5V, hFE of 1000, and can handle IC up to 2A. With a max operating temp of 150°C and fT of 50MHz, it's suitable for high-power amplification in compact designs.

Median Price

$0.637

Lifecycle Status

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Mouser Electronics

USA . 470 parts In-Stock

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$1.800

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$0.802

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470

$1.800

$0.802

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DigiKey

USA . 7 parts In-Stock

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$1.800

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$0.764

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$0.551

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7

$1.800

$0.764

$0.551

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Avnet

USA . 10,000 parts In-Stock

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$0.579

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$0.579

Chip1Stop

Japan . 5,000 parts In-Stock

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$0.308

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$0.277

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$0.255

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$0.308

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$0.255

Verical

USA . 1,905 parts In-Stock

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$0.637

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$0.473

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$0.405

1,905

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$0.637

$0.473

$0.405

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ComSIT Distribution GmbH

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NAC Semi

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$0.280

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$0.280

ComSIT USA

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VNN

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IBS Electronics

USA . 2,500 parts In-Stock

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$0.247

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Nova Conductors

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Ampacity Inc.

Singapore . 2,973 parts In-Stock

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$0.262

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Benley Electronics

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$0.750

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$0.750

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CoreStaff

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$0.814

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$0.360

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$0.313

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Microchip USA

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ChipstoGo Electronic ltd

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Kepictronics

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Argo Parts USA

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Aranea Global

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Overview

Looking for a high-quality small signal BJT? Look no further than the ROHM 2SB1316TL! With its DARLINGTON configuration, built-in diode, and resistor, this PNP transistor is perfect for amplifier applications. Its GULL WING terminals and compact package make it easy to install, while its impressive hFE of 1000 ensures reliable performance. Trust ROHM's reputation for excellence and upgrade your electronic projects with the 2SB1316TL today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching circuits and amplification, making this product versatile.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration provides high current gain and the built-in diode and resistor offer additional functionality, making it convenient for circuit design.

Transistor Application: AMPLIFIER

Designed for amplifier applications, ensuring good signal amplification and performance in audio or signal processing circuits.

Surface Mount: YES

The surface-mount capability allows easy integration onto PCBs, saving space and simplifying assembly processes.

Maximum VCEsat: 1.5 V

Low VCEsat minimizes power loss and improves efficiency in circuit operation.

Maximum Power Dissipation (Abs): 2 W

Able to handle high power dissipation, suitable for applications requiring reliable performance under varying loads.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, it can withstand elevated temperatures in demanding environments.

Maximum Collector-Emitter Voltage: 100 V

Supports high collector-emitter voltages, enabling use in a wide range of voltage applications.

Maximum Collector Current (IC): 2 A

Capable of handling high collector current levels, making it suitable for power applications.

Nominal Transition Frequency (fT): 50 MHz

The high transition frequency allows for fast response times and high-frequency operation in RF and switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SB1316TL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

BUILT-IN BIAS RESISTOR

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

1000

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

10 W

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN COPPER

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1.5 V

Trade Compliance

2SB1316TL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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