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2SB1123

Onsemi

2SB1123 by Onsemi

Onsemi's 2SB1123 is a PNP BJT transistor for switching applications. It has a VCEsat of 0.7V, hFE of 40, and IC of 2A. Ideal for small outline packages in devices requiring low power dissipation and high collector-emitter voltage capabilities up to 50V.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Odintec Ltd.

Israel . 3,000 parts In-Stock

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Digiode

USA . 1,279 parts In-Stock

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Huijzer Components

Netherlands . 766 parts In-Stock

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Vyrian

USA . 438 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 20 parts In-Stock

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Electronic Expediters

USA . 5 parts In-Stock

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Native Components

USA . 941 parts In-Stock

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$19.066

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Northwest PG Solutions

USA . 525 parts In-Stock

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$20.972

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$18.875

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TANS Electronics

Latvia . 7,406 parts In-Stock

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Problanco Electronics

Mexico . 6,192 parts In-Stock

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Kulean Microsystems

USA . 5,801 parts In-Stock

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Authorized Procurement Solutions

USA . 5,720 parts In-Stock

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SupplyDigital Components

Austria . 5,155 parts In-Stock

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S.R.D Solutions

India . 1,000 parts In-Stock

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Corphita

USA . 735 parts In-Stock

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Corohmni

South Africa . 468 parts In-Stock

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UHIMA Technologies

Türkiye . 363 parts In-Stock

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Overview

Discover the power of the Onsemi 2SB1123 Small Signal Bipolar Junction Transistor. With a sleek plastic/epoxy package, this PNP transistor is perfect for switching applications. Onsemi's reputation for high-quality products shines through in this single configuration transistor, offering customers reliability and efficiency. Say goodbye to power wastage with a maximum VCEsat of 0.7V and a maximum power dissipation of 1.3W. Whether you're working on electronics or industrial projects, the Onsemi 2SB1123 is the perfect solution for your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and insulation for the transistor, ensuring its durability and reliability.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, allowing for easy integration into existing circuits.

Configuration: SINGLE

Simplifies circuit design by having only one transistor in the package.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in these scenarios.

Surface Mount: YES

Enables easy mounting on PCBs, saving space and allowing for automated assembly.

Maximum VCEsat: 0.7 V

Low VCEsat helps in reducing power losses during operation, improving overall efficiency.

Package Shape: RECTANGULAR

Provides a standardized form factor for easy integration into various circuit designs.

Terminal Form: FLAT

Ensures easy soldering and secure connection to the PCB.

No. of Terminals: 3

Simple 3-terminal package for straightforward circuit connections.

Maximum Power Dissipation (Abs): 1.3 W

Able to handle relatively high power levels, making it suitable for a variety of applications.

Package Style (Meter): SMALL OUTLINE

Compact size allows for high-density PCB designs and saves space in electronic devices.

Maximum Power Dissipation Ambient: 0.5 W

Can dissipate heat effectively in various operating conditions, ensuring reliability.

Minimum DC Current Gain (hFE): 40

Ensures consistent amplification performance, providing stability in signal processing.

Maximum Operating Temperature: 150 °C

Operates reliably at high temperatures, making it suitable for harsh environments.

Maximum Collector-Base Capacitance: 22 pF

Low capacitance allows for fast switching speeds and reduces high-frequency signal distortion.

Maximum Collector-Emitter Voltage: 50 V

Handles moderate voltage levels, suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon material provides good performance characteristics and reliability in operation.

Maximum Collector Current (IC): 2 A

Able to handle high current levels, making it suitable for applications requiring significant power.

Terminal Position: SINGLE

Simplifies circuit connections and layout, ensuring ease of use.

Case Connection: COLLECTOR

Provides a clear indication of the transistor's pinout, aiding in correct installation and connection.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency allows for fast signal switching, ideal for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SB1123 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Base Capacitance:

22 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSSO-F3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.5 W

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.7 V

Trade Compliance

2SB1123 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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