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2SB1123S

Onsemi

2SB1123S by Onsemi

2SB1123S by Onsemi is a PNP BJT transistor for switching applications. Features include VCEsat of 0.7V, hFE of 140, and IC of 2A. Ideal for small outline packages in high-speed switching circuits with a max operating temperature of 150 °C.

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1k+

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Digiode

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Vyrian

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Microfarads

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Native Components

USA . 203 parts In-Stock

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Northwest PG Solutions

USA . 280 parts In-Stock

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Kulean Microsystems

USA . 8,018 parts In-Stock

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SupplyDigital Components

Austria . 6,491 parts In-Stock

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Problanco Electronics

Mexico . 4,318 parts In-Stock

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TANS Electronics

Latvia . 4,187 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 712 parts In-Stock

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Corohmni

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Overview

Enhance your electronic projects with the high-quality 2SB1123S from Onsemi. As a leading manufacturer in the industry, Onsemi delivers reliable and durable Small Signal Bipolar Junction Transistors (BJT) like no other. This PNP transistor is perfect for switching applications, offering a maximum VCEsat of 0.7V and a minimum DC current gain (hFE) of 140. With its compact design and maximum power dissipation of 1.3W, the 2SB1123S provides exceptional performance in a wide range of applications. Trust Onsemi to provide you with the best in transistor technology for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package lightweight and durable, ideal for portable electronic devices.

Polarity or Channel Type: PNP

PNP configuration allows for easy integration into circuits with other PNP transistors.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Surface Mount: YES

Surface mount capability makes it easy to integrate into modern PCB designs.

Maximum VCEsat: 0.7 V

Low VCEsat minimizes power loss and improves efficiency in switching operations.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and soldering on PCBs.

Terminal Form: FLAT

Flat terminals ensure secure connections and easy soldering.

No. of Terminals: 3

3 terminals provide necessary connections for typical transistor operation.

Maximum Power Dissipation (Abs): 1.3 W

High power dissipation capability allows for handling moderate power levels without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package saves space on PCBs and is suitable for compact designs.

Maximum Power Dissipation Ambient: 0.5 W

Low ambient power dissipation helps in maintaining lower operating temperatures.

Minimum DC Current Gain (hFE): 140

High DC current gain ensures reliable and consistent transistor operation.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for operation in a wide range of environments.

Maximum Collector-Base Capacitance: 22 pF

Low collector-base capacitance minimizes signal distortion and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 50 V

High collector-emitter voltage rating provides protection against voltage spikes.

Transistor Element Material: SILICON

Silicon material offers consistent performance and reliability in transistor operation.

Maximum Collector Current (IC): 2 A

High collector current rating allows for handling higher currents without damage.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and layout.

Case Connection: COLLECTOR

Collector case connection provides easy access to the collector terminal for external connections.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency allows for reliable performance in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SB1123S attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Base Capacitance:

22 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

140

JESD-30 Code:

R-PSSO-F3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.5 W

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.7 V

Trade Compliance

2SB1123S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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