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2SB1122S-TD-E

Onsemi

2SB1122S-TD-E by Onsemi

The Onsemi 2SB1122S-TD-E is a PNP BJT with max. power dissipation of 1.3W, min. hFE of 140, and max. IC of 1A. Ideal for surface mount applications in electronics due to its single configuration and high temp rating up to 150°C.

Median Price

$0.205

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 189 parts In-Stock

1+ parts

$0.269

100+ parts

$0.174

1k+ parts

$0.156

10k+ parts

$0.132

189

$0.269

$0.174

$0.156

$0.132

Rochester

USA . 73,000 parts In-Stock

1+ parts

-

100+ parts

$0.180

1k+ parts

$0.150

10k+ parts

$0.133

73,000

-

$0.180

$0.150

$0.133

DigiKey

USA . 73,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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$0.230

73,000

-

-

-

$0.230

Verical

USA . 54,000 parts In-Stock

1+ parts

-

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$0.167

54,000

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-

-

$0.167

Flip Electronics (Authorized)

USA . 2,015 parts In-Stock

1+ parts

-

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2,015

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Mouser Electronics

USA . 1,283 parts In-Stock

1+ parts

-

100+ parts

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$0.315

10k+ parts

$0.178

1,283

-

-

$0.315

$0.178

Chip1Stop

Japan . 251 parts In-Stock

1+ parts

-

100+ parts

$0.155

1k+ parts

-

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251

-

$0.155

-

-

Distributors (In-Stock)

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Digiode

USA . 917 parts In-Stock

1+ parts

$0.034

100+ parts

-

1k+ parts

-

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917

$0.034

-

-

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Vyrian

USA . 2,407 parts In-Stock

1+ parts

$0.036

100+ parts

-

1k+ parts

-

10k+ parts

-

2,407

$0.036

-

-

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Ozdisan Elektronik

Türkiye . 134 parts In-Stock

1+ parts

$0.387

100+ parts

-

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-

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134

$0.387

-

-

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Chip Stock

USA . 26,000 parts In-Stock

1+ parts

-

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26,000

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Flip Electronics

USA . 2,015 parts In-Stock

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2,015

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Distributors (Availability)

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Corphita

USA . 525 parts In-Stock

1+ parts

$0.032

100+ parts

-

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525

$0.032

-

-

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Continental Prestige Electronics

USA . 1,585 parts In-Stock

1+ parts

$0.082

100+ parts

-

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1,585

$0.082

-

-

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Corohmni

South Africa . 475 parts In-Stock

1+ parts

$0.085

100+ parts

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475

$0.085

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Native Components

USA . 691 parts In-Stock

1+ parts

$7.420

100+ parts

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691

$7.420

-

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QUARKTWIN TECHNOLOGY LTD

USA . 19,318 parts In-Stock

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19,318

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TANS Electronics

Latvia . 7,748 parts In-Stock

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7,748

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Kulean Microsystems

USA . 4,495 parts In-Stock

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4,495

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Perfect Parts

USA . 2,975 parts In-Stock

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2,975

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Glotronic Ltd.

UK . 2,900 parts In-Stock

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2,900

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Problanco Electronics

Mexico . 2,208 parts In-Stock

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2,208

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Metaverse IC Inc.

Canada . 1,358 parts In-Stock

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1,358

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UHIMA Technologies

Türkiye . 945 parts In-Stock

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945

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SupplyDigital Components

Austria . 683 parts In-Stock

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683

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GreenTree Electronics

Israel . 170 parts In-Stock

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170

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Northwest PG Solutions

USA . 38 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$7.272

10k+ parts

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38

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$7.272

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Overview

Elevate your circuit designs with the Onsemi 2SB1122S-TD-E PNP Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, known for their high-quality components, this transistor offers reliability and performance in a compact package. Ideal for applications requiring a Single Configuration, this transistor boasts a Maximum Power Dissipation of 1.3W, making it perfect for a variety of electronic projects. Enhance your designs with the 2SB1122S-TD-E and experience the value and efficiency it brings to your creations.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications and complementary symmetry amplifier circuits.

Configuration: SINGLE

Single configuration transistors are easier to implement and troubleshoot in circuits compared to multiple configurations.

Surface Mount: YES

Surface mount transistors are smaller in size, making them ideal for compact circuit designs and PCB layouts.

Maximum Power Dissipation (Abs): 1.3 W

With a high maximum power dissipation, this transistor can handle higher power loads and operate reliably in various applications.

Minimum DC Current Gain (hFE): 140

A high minimum DC current gain ensures stable and consistent amplification of signals in the circuit.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without performance degradation.

Maximum Collector Current (IC): 1 A

The high maximum collector current allows this transistor to handle higher current flows, making it suitable for power applications.

Terminal Finish: TIN BISMUTH

Tin bismuth terminal finish provides good solderability and reliability in various operating conditions.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature ensures quick and efficient soldering during manufacturing processes.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance allows this transistor to withstand the soldering process without damage.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SB1122S-TD-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Configuration:

Minimum DC Current Gain (hFE):

140

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

2SB1122S-TD-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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