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2SB1123R

Onsemi

2SB1123R by Onsemi

The Onsemi 2SB1123R is a PNP BJT transistor for switching applications. It has a VCEsat of 0.7V, hFE of 100, and IC of 2A. Ideal for small outline packages, it operates up to 150 °C with a max fT of 150MHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,215 parts In-Stock

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Digiode

USA . 542 parts In-Stock

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Native Components

USA . 745 parts In-Stock

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$0.422

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$0.405

745

$0.422

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$0.405

Northwest PG Solutions

USA . 546 parts In-Stock

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$0.464

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$0.409

546

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$0.409

SupplyDigital Components

Austria . 7,256 parts In-Stock

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Kulean Microsystems

USA . 5,477 parts In-Stock

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Problanco Electronics

Mexico . 2,677 parts In-Stock

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TANS Electronics

Latvia . 2,411 parts In-Stock

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UHIMA Technologies

Türkiye . 455 parts In-Stock

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Corohmni

South Africa . 435 parts In-Stock

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Corphita

USA . 114 parts In-Stock

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Overview

Upgrade your electronic designs with the 2SB1123R by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality small signal bipolar junction transistors for various applications, including switching circuits. With a maximum VCEsat of 0.7V and a minimum DC current gain of 100, this PNP transistor offers high efficiency and reliability. Its compact design and maximum power dissipation of 1.3W make it ideal for space-constrained projects. Trust Onsemi to provide innovative solutions that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and cost effective, making it ideal for small signal applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications and can complement existing NPN transistors in a circuit.

Configuration: SINGLE

Single configuration transistors are easy to use and ideal for simple circuit designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Surface mount package allows for easy installation on PCBs and saves space.

Maximum VCEsat: 0.7 V

Low VCEsat value indicates minimal saturation voltage loss, leading to efficient transistor operation.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to handle and place on PCBs during assembly.

Terminal Form: FLAT

Flat terminals ensure good contact and connection reliability in the circuit.

Maximum Power Dissipation (Abs): 1.3 W

High power dissipation capability allows for handling of moderate power levels without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package saves space on the PCB and is suitable for compact designs.

Maximum Power Dissipation Ambient: 0.5 W

Even in ambient conditions, the transistor can dissipate power efficiently to prevent overheating.

Minimum DC Current Gain (hFE): 100

High DC current gain ensures accurate amplification of signals in the circuit.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, making it suitable for industrial applications.

Maximum Collector-Base Capacitance: 22 pF

Low capacitance value minimizes signal distortion and ensures fast switching speeds.

Maximum Collector-Emitter Voltage: 50 V

High collector-emitter voltage rating allows for handling higher voltages in the circuit.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability in various applications.

Maximum Collector Current (IC): 2 A

High collector current rating allows for handling of higher current levels in the circuit.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and enhances ease of use.

Case Connection: COLLECTOR

Collector case connection ensures efficient heat dissipation and minimizes thermal resistance.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency allows for faster switching speeds and high-frequency operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SB1123R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Base Capacitance:

22 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSSO-F3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.5 W

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.7 V

Trade Compliance

2SB1123R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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