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2SB1121U

Onsemi

2SB1121U by Onsemi

The Onsemi 2SB1121U is a PNP BJT transistor with max. collector-emitter voltage of 25V and max. collector current of 2A. With a min. DC current gain of 280, it's ideal for switching applications in small outline packages at up to 150 °C operating temperature.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 1,026 parts In-Stock

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Vyrian

USA . 622 parts In-Stock

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Problanco Electronics

Mexico . 7,845 parts In-Stock

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Kulean Microsystems

USA . 6,949 parts In-Stock

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TANS Electronics

Latvia . 5,770 parts In-Stock

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SupplyDigital Components

Austria . 3,543 parts In-Stock

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Corphita

USA . 1,907 parts In-Stock

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Northwest PG Solutions

USA . 1,387 parts In-Stock

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UHIMA Technologies

Türkiye . 885 parts In-Stock

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Native Components

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Corohmni

South Africa . 102 parts In-Stock

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Overview

Upgrade your electronic projects with the reliable 2SB1121U by Onsemi! As a leading manufacturer in the industry, Onsemi delivers top-notch quality in their Small Signal Bipolar Junction Transistors (BJT) like this PNP transistor. Ideal for switching applications, this transistor offers a multitude of benefits and advantages to customers, including high power dissipation, excellent DC current gain, and a wide operating temperature range. Trust Onsemi for all your transistor needs and experience the difference in performance and reliability!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is cost-effective and provides good electrical insulation, making the transistor durable and reliable.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications and can provide high current gain.

Configuration: SINGLE

Simplifies circuit design and makes it easier to use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such use cases.

Surface Mount: YES

Ideal for compact and densely populated PCB designs, making it suitable for modern electronics.

Maximum Power Dissipation (Abs): 0.5 W

Can handle moderate power levels, suitable for a wide range of low to medium power applications.

Maximum Operating Temperature: 150 °C

Operates effectively at high temperatures, ensuring reliability in demanding environments.

Maximum Collector-Emitter Voltage: 25 V

Suitable for low voltage applications, providing safety and preventing voltage breakdown.

Maximum Collector Current (IC): 2 A

Capable of handling high currents, making it suitable for various switching applications.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency allows for fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SB1121U attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

280

JESD-30 Code:

R-PSSO-F3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SB1121U Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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