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2SB1122T-TD-E

Onsemi

2SB1122T-TD-E by Onsemi

Onsemi's 2SB1122T-TD-E is a PNP BJT with max. power dissipation of 1.3W, hFE of 200, and max. collector current of 1A. Ideal for surface mount applications in electronics due to its single configuration and temp. range up to 150°C.

Median Price

$0.139

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 32,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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$0.110

32,000

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-

$0.110

Flip Electronics (Authorized)

USA . 32,000 parts In-Stock

1+ parts

-

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32,000

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Farnell

UK . 31,000 parts In-Stock

1+ parts

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10k+ parts

$0.145

31,000

-

-

-

$0.145

Rochester

USA . 25,000 parts In-Stock

1+ parts

-

100+ parts

$0.139

1k+ parts

$0.115

10k+ parts

$0.103

25,000

-

$0.139

$0.115

$0.103

Verical

USA . 13,000 parts In-Stock

1+ parts

-

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$0.129

13,000

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$0.129

Mouser Electronics

USA . 2,985 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.177

10k+ parts

$0.140

2,985

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-

$0.177

$0.140

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,309 parts In-Stock

1+ parts

$0.145

100+ parts

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2,309

$0.145

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Digiode

USA . 1,834 parts In-Stock

1+ parts

$0.148

100+ parts

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1,834

$0.148

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Bristol Electronics

USA . 2,700 parts In-Stock

1+ parts

$0.800

100+ parts

$0.400

1k+ parts

$0.160

10k+ parts

-

2,700

$0.800

$0.400

$0.160

-

Chip Stock

USA . 57,000 parts In-Stock

1+ parts

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57,000

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Flip Electronics

USA . 32,000 parts In-Stock

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32,000

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Dan-Mar Components

USA . 2,700 parts In-Stock

1+ parts

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100+ parts

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2,700

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ACDS - Activité Composants Distribution Service

France . 2,000 parts In-Stock

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2,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,330 parts In-Stock

1+ parts

$0.140

100+ parts

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2,330

$0.140

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Corohmni

South Africa . 393 parts In-Stock

1+ parts

$0.145

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393

$0.145

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Microchip USA

USA . 208 parts In-Stock

1+ parts

$1.210

100+ parts

$1.200

1k+ parts

$1.200

10k+ parts

$1.200

208

$1.210

$1.200

$1.200

$1.200

Metaverse IC Inc.

Canada . 306,000 parts In-Stock

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306,000

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Continental Prestige Electronics

USA . 31,000 parts In-Stock

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$0.115

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31,000

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$0.115

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Kepictronics

USA . 24,000 parts In-Stock

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24,000

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QUARKTWIN TECHNOLOGY LTD

USA . 6,475 parts In-Stock

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6,475

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Kulean Microsystems

USA . 5,792 parts In-Stock

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5,792

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SupplyDigital Components

Austria . 5,328 parts In-Stock

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5,328

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Problanco Electronics

Mexico . 1,706 parts In-Stock

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1,706

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Northwest PG Solutions

USA . 1,465 parts In-Stock

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1,465

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TANS Electronics

Latvia . 1,280 parts In-Stock

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1,280

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Native Components

USA . 771 parts In-Stock

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771

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UHIMA Technologies

Türkiye . 45 parts In-Stock

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45

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Overview

Discover the power of innovation with the 2SB1122T-TD-E by Onsemi, a top-tier manufacturer known for their superior quality and reliability. As a Small Signal Bipolar Junction Transistor (BJT) in PNP configuration, this product offers unparalleled performance in a compact design. Ideal for a wide range of applications, from audio amplification to control circuits, this transistor delivers exceptional value with a maximum collector current of 1 A and a minimum DC current gain of 200. Trust Onsemi to provide you with the cutting-edge technology you need to succeed.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in applications where the circuit needs a positive voltage to control the flow of current, making this transistor suitable for such requirements.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes the transistor easy to integrate into various electronic systems.

Surface Mount: YES

Surface mount capability allows for efficient and compact PCB assembly, saving space and enabling mass production of electronic devices.

Maximum Power Dissipation (Abs): 1.3 W

With a high maximum power dissipation rating, this transistor can handle relatively high power levels without risking damage, ensuring reliable performance in demanding applications.

Minimum DC Current Gain (hFE): 200

The high minimum DC current gain ensures consistent and reliable amplification of signals in various electronic circuits, making this transistor versatile and suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature tolerance of 150°C allows this transistor to function effectively in environments with elevated temperatures, increasing its operational reliability and durability.

Maximum Collector Current (IC): 1 A

The high maximum collector current rating of 1 A enables this transistor to handle significant current loads, making it suitable for power applications that require efficient current control.

Terminal Finish: TIN BISMUTH

The Tin Bismuth terminal finish provides good solderability and thermal conductivity, ensuring reliable connections and efficient heat dissipation in the electronic circuit.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature of 30 seconds helps prevent thermal damage to the transistor during the soldering process, ensuring its integrity and functionality.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance of 260°C allows for robust soldering processes, making this transistor suitable for applications requiring high-temperature soldering techniques.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SB1122T-TD-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

2SB1122T-TD-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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