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2SB1181TL/Q

ROHM

2SB1181TL/Q by ROHM

ROHM's 2SB1181TL/Q is a PNP BJT transistor with VCEsat of 0.4V, hFE of 120, and IC of 1A. Ideal for switching applications, it has a max operating temp of 150°C and can handle power dissipation up to 10W in a small outline package.

Median Price

$0.940

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DigiKey

USA . 35 parts In-Stock

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Verical

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Chip1Stop

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Chip Stock

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$0.293

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Ampacity Inc.

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Overview

Unlock the power of cutting-edge technology with the 2SB1181TL/Q by ROHM. As a leading manufacturer in the industry, ROHM delivers superior quality and reliability. This small signal bipolar junction transistor is perfect for switching applications, offering a maximum VCEsat of 0.4V and a minimum DC current gain of 120. With a maximum collector-emitter voltage of 80V and a peak reflow temperature of 260°C, this PNP transistor provides unmatched performance and efficiency. Trust ROHM to bring you the innovative solutions you need for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material that also helps in keeping the cost low.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required.

Configuration: SINGLE

Simple and easy to use in circuits.

Transistor Application: SWITCHING

Ideal for switching applications with fast response times.

Surface Mount: YES

Allows for easy and compact PCB design.

Maximum VCEsat: 0.4 V

Low saturation voltage helps in reducing power loss and increasing efficiency.

Package Shape: RECTANGULAR

Easily mountable and fits well in modern circuit designs.

Terminal Form: GULL WING

Robust terminal form for secure connections.

No. of Terminals: 2

Simplified connections in circuits.

Maximum Power Dissipation (Abs): 10 W

Can handle high power applications without overheating.

Package Style (Meter): SMALL OUTLINE

Compact package style for space-constrained designs.

Maximum Power Dissipation Ambient: 10 W

Maintains performance even in high ambient temperature environments.

Minimum DC Current Gain (hFE): 120

Consistent and reliable performance with high current gain.

Maximum Operating Temperature: 150 °C

Suitable for operation in a wide range of temperature conditions.

Maximum Collector-Emitter Voltage: 80 V

Safe operating voltage for various applications.

Transistor Element Material: SILICON

Common and reliable material choice for transistor elements.

Maximum Collector Current (IC): 1 A

Capable of handling high currents for various applications.

Terminal Finish: TIN COPPER

Provides good conductivity and corrosion resistance at terminals.

Terminal Position: SINGLE

Simplified connection setup with single terminal position.

Case Connection: COLLECTOR

Ease of connecting to the collector terminal.

Maximum Time At Peak Reflow Temperature (s): 10

Suitable for reflow soldering processes within specified time limits.

Peak Reflow Temperature °C: 260

High reflow temperature capability for soldering processes.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency for fast switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SB1181TL/Q attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

10 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN COPPER

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

2SB1181TL/Q Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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