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2SB1188T100R

ROHM

2SB1188T100R by ROHM

ROHM's 2SB1188T100R is a PNP BJT transistor with max VCEsat of 0.8V, hFE of 180, and IC of 2A. Ideal for amplifier applications due to its small outline package style and high transition frequency of 100MHz.

Median Price

$0.300

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Overview

Looking for a high-quality Small Signal Bipolar Junction Transistor (BJT) for your amplifier applications? Look no further than the 2SB1188T100R by ROHM. With its PNP polarity, single configuration, and maximum collector current of 2A, this transistor offers exceptional performance and reliability. The package body material is made of durable PLASTIC/EPOXY, ensuring long-lasting use. Trust in ROHM's reputation for excellence in electronic components and experience the benefits of using the 2SB1188T100R in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight, durable, and cost-effective, making it ideal for a small signal transistor.

Polarity or Channel Type: PNP

PNP transistors have high input impedance and low output impedance, making them suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to use in various applications.

Maximum VCEsat: 0.8 V

Low VCEsat helps minimize power loss and improve efficiency in amplifier circuits.

Surface Mount: YES

Surface mount packaging allows for easy automated assembly and saves space on the PCB.

Maximum Power Dissipation (Abs): 2 W

With a maximum power dissipation of 2 W, this transistor can handle moderate power levels in amplifier circuits.

Maximum Collector-Emitter Voltage: 32 V

This high voltage rating ensures reliable operation and prevents damage in amplifier applications.

Maximum Collector Current (IC): 2 A

The high collector current rating allows this transistor to handle large current loads in amplifier circuits.

Nominal Transition Frequency (fT): 100 MHz

The high transition frequency indicates good high-frequency performance, making this transistor suitable for amplifying high-frequency signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SB1188T100R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

32 V

Configuration:

Minimum DC Current Gain (hFE):

180

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e2

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

2 W

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Copper (Sn/Cu)

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.8 V

Trade Compliance

2SB1188T100R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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