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2SB1695TL

ROHM

2SB1695TL by ROHM

ROHM's 2SB1695TL is a PNP BJT transistor with VCEsat of 0.37V, hFE of 270, and fT of 280MHz. Ideal for amplifier applications, it has a max IC of 1.5A and operates up to 150°C. Suitable for surface mount with GULL WING terminals in a small outline package.

Median Price

$0.361

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$0.145

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$0.730

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Farnell

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$0.222

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Element14

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Verical

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Overview

Enhance your amplifier projects with the high-quality 2SB1695TL PNP transistor by ROHM. Made from durable plastic/epoxy material, this single configuration transistor offers a maximum VCEsat of just 0.37V, ensuring efficient performance. Perfect for small signal applications, this transistor boasts a minimum DC current gain of 270 and a maximum operating temperature of 150°C. With its compact rectangular package shape and gull wing terminal form, the 2SB1695TL is easy to integrate into your designs. Trust ROHM's reputation for excellence and choose this transistor for reliable, high-performance amplification in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the transistor lightweight and durable.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and allows for easier integration into projects.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

The surface mount capability allows for easy installation onto PCBs, saving space and improving assembly efficiency.

Maximum VCEsat: 0.37 V

The low VCEsat value indicates minimal saturation voltage, improving efficiency in amplifier circuits.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and soldering onto PCBs.

Terminal Form: GULL WING

The gull wing terminal form provides strong mechanical support and makes soldering easier.

No. of Terminals: 3

The 3 terminals allow for easy connectivity and integration into circuits.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1 W, this transistor can handle moderate power levels in amplifier applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for a compact circuit design.

Minimum DC Current Gain (hFE): 270

The high minimum DC current gain ensures reliable amplification in various operating conditions.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments.

Maximum Collector-Emitter Voltage: 30 V

The 30 V maximum collector-emitter voltage allows for safe operation in a wide range of applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making this transistor a durable choice.

Maximum Collector Current (IC): 1.5 A

The 1.5 A maximum collector current rating ensures the transistor can handle moderate current levels in amplifier circuits.

Terminal Finish: TIN SILVER COPPER

The tin silver copper terminal finish provides good conductivity and solderability for reliable connections.

Terminal Position: DUAL

The dual terminal position allows for flexible placement and connectivity in circuits.

Maximum Time At Peak Reflow Temperature (s): 10

With a maximum time at peak reflow temperature of 10 seconds, this transistor is easy to solder onto PCBs.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures proper soldering and reliability in manufacturing processes.

Nominal Transition Frequency (fT): 280 MHz

With a nominal transition frequency of 280 MHz, this transistor offers high-frequency performance in amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SB1695TL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

270

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.37 V

Trade Compliance

2SB1695TL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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