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2SB1201S-TL-E

Onsemi

2SB1201S-TL-E by Onsemi

Onsemi's 2SB1201S-TL-E is a PNP BJT transistor with hFE of 140, VCE of 50V, and IC of 2A. Ideal for switching applications due to its high transition frequency of 150MHz. This surface-mount device in a small outline package is widely used in electronics for efficient signal amplification.

Median Price

$0.538

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 635 parts In-Stock

1+ parts

$0.085

100+ parts

$0.081

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$0.079

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635

$0.085

$0.081

$0.079

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Element14

Singapore . 1,307 parts In-Stock

1+ parts

$0.591

100+ parts

$0.489

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1,307

$0.591

$0.489

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Chip1Stop

Japan . 635 parts In-Stock

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$0.596

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$0.377

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635

$0.596

$0.377

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Farnell

UK . 1,307 parts In-Stock

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$1.340

100+ parts

$0.485

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$0.426

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$0.330

1,307

$1.340

$0.485

$0.426

$0.330

Mouser Electronics

USA . 4,318 parts In-Stock

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$1.470

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$0.462

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$0.357

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4,318

$1.470

$0.462

$0.357

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DigiKey

USA . 3,230 parts In-Stock

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$1.600

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$0.675

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3,230

$1.600

$0.675

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Verical

USA . 18,200 parts In-Stock

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$0.359

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18,200

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$0.359

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Rochester

USA . 2,800 parts In-Stock

1+ parts

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100+ parts

$0.485

1k+ parts

$0.403

10k+ parts

$0.359

2,800

-

$0.485

$0.403

$0.359

Avnet

USA . 2,100 parts In-Stock

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Master Electronics

USA . 2,100 parts In-Stock

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$0.328

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$0.315

2,100

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$0.315

Newark

USA . 1,286 parts In-Stock

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$0.407

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$0.382

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1,286

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$0.407

$0.382

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Distributors (In-Stock)

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Digiode

USA . 1,145 parts In-Stock

1+ parts

$0.060

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$0.060

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Nova Conductors

Japan . 23 parts In-Stock

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$0.446

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23

$0.446

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TME

Poland . 696 parts In-Stock

1+ parts

$1.120

100+ parts

$0.570

1k+ parts

$0.424

10k+ parts

$0.409

696

$1.120

$0.570

$0.424

$0.409

Chip Stock

USA . 18,505 parts In-Stock

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Flip Electronics

USA . 10,500 parts In-Stock

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Vyrian

USA . 2,361 parts In-Stock

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2,361

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IBS Electronics

USA . 2,100 parts In-Stock

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$0.460

10k+ parts

$0.433

2,100

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$0.460

$0.433

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 836 parts In-Stock

1+ parts

$0.057

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836

$0.057

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Corohmni

South Africa . 302 parts In-Stock

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$0.063

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302

$0.063

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Argo Parts USA

USA . 1,592 parts In-Stock

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$0.415

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$0.403

1,592

$0.415

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$0.403

Kulean Microsystems

USA . 5,291 parts In-Stock

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Kepictronics

USA . 4,895 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Continental Prestige Electronics

USA . 2,800 parts In-Stock

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$0.420

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$0.420

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Problanco Electronics

Mexico . 2,363 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$0.437

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$0.424

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$0.415

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$0.437

$0.424

$0.415

SupplyDigital Components

Austria . 1,757 parts In-Stock

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iodParts Technologies Inc.

India . 695 parts In-Stock

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695

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Perfect Parts

USA . 457 parts In-Stock

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457

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UHIMA Technologies

Türkiye . 452 parts In-Stock

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452

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TANS Electronics

Latvia . 63 parts In-Stock

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Overview

Elevate your electronics projects with the 2SB1201S-TL-E by Onsemi. Crafted by a trusted manufacturer, this Small Signal Bipolar Junction Transistor offers exceptional quality and reliability. Ideal for switching applications, this PNP transistor boasts a maximum collector-emitter voltage of 50V and a high DC current gain of 140. With its surface mount design and compact package style, this transistor is perfect for space-constrained projects. Experience seamless performance and efficient power management with the 2SB1201S-TL-E, a versatile component that will take your creations to the next level.

Feature Benefit Bullets

Package Body Material: PLATIC/EPOXY

Durable and heat resistant material ensures long-term reliability and stability.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, offering versatility.

Configuration: SINGLE

Simplified setup and usage with a single transistor configuration.

Transistor Application: SWITCHING

Ideal for switching applications, providing efficient switching operations.

Surface Mount: YES

Easy and efficient surface mounting for streamlined assembly process.

Package Shape: RECTANGULAR

Compact and space-saving design for versatile installation options.

Terminal Form: GULL WING

Gull wing terminals provide secure and reliable connections.

No. of Terminals: 2

Simplified two-terminal setup for straightforward connections.

Package Style (Meter): SMALL OUTLINE

Small outline package saves space and allows for high-density mounting.

Minimum DC Current Gain (hFE): 140

High DC current gain ensures efficient signal amplification.

Maximum Collector-Emitter Voltage: 50 V

Suitable for applications requiring up to 50V voltage handling.

Transistor Element Material: SILICON

Reliable and stable silicon material for consistent performance.

Maximum Collector Current (IC): 2 A

High collector current capability for demanding applications.

Terminal Position: SINGLE

Single terminal position simplifies installation and connectivity.

Case Connection: COLLECTOR

Collector case connection for efficient signal transmission.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency for fast and responsive signal switching.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SB1201S-TL-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

140

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SB1201S-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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