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2SB1386T100R

ROHM

2SB1386T100R by ROHM

ROHM 2SB1386T100R is a PNP BJT transistor with VCEsat of 1V, hFE of 180, and IC of 5A. Ideal for switching applications, it has a max operating temp of 150°C and fT of 120MHz. Its small outline package makes it suitable for surface mount designs.

Median Price

$1.040

Lifecycle Status

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DigiKey

USA . 1,840 parts In-Stock

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$0.422

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$0.325

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Element14

Singapore . 616 parts In-Stock

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Farnell

UK . 616 parts In-Stock

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Chip Stock

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Connector Distribution Corp

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Right Parts Inc.

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Nova Conductors

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ACDS - Activité Composants Distribution Service

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Ampacity Inc.

Singapore . 279 parts In-Stock

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Advanced Electronics

New Zealand . 10 parts In-Stock

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Corohmni

South Africa . 499 parts In-Stock

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Microchip USA

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RC Electronics

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Epart123

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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Overview

Unlock the power of advanced technology with the 2SB1386T100R by ROHM, a top-quality Small Signal Bipolar Junction Transistor engineered for superior performance and reliability. Manufactured by industry leader ROHM, this PNP transistor offers seamless switching capabilities in a compact, surface-mount package. Ideal for a wide range of applications, this transistor boasts a high DC current gain and low VCEsat, ensuring optimal efficiency and precision in your electronics projects. Experience the unparalleled value and benefits that this cutting-edge component brings to your designs, setting you apart from the competition.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, ensuring reliable performance in various operating conditions.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this transistor suitable for switching purposes.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easy to use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it a reliable choice for circuits that require fast switching speeds.

Surface Mount: YES

The surface mount capability allows for easy and efficient assembly onto PCBs, saving space and simplifying the manufacturing process.

Maximum VCEsat: 1 V

Low VCEsat minimizes power dissipation and improves efficiency in switching operations.

Package Shape: RECTANGULAR

Rectangular shape provides easy placement and alignment on PCBs, ensuring proper connectivity and heat dissipation.

No. of Terminals: 3

With 3 terminals, this transistor is easy to connect and integrate into various electronic circuits.

Maximum Power Dissipation (Abs): 2 W

With a high maximum power dissipation, this transistor can handle high power loads without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space, making it suitable for compact electronic devices and applications.

Maximum Power Dissipation Ambient: 2 W

Maintaining 2W power dissipation in ambient conditions ensures stable and reliable performance even in high temperature environments.

Minimum DC Current Gain (hFE): 180

High minimum DC current gain ensures consistent amplification and performance in various operating conditions.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can endure elevated temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 20 V

The high maximum collector-emitter voltage rating provides a wide safety margin in various voltage applications.

Transistor Element Material: SILICON

Silicon material offers high reliability and performance, essential for long-term use in electronic circuits.

Maximum Collector Current (IC): 5 A

High maximum collector current rating allows this transistor to handle high current loads, making it suitable for power applications.

Terminal Finish: Tin/Copper (Sn/Cu)

Tin/Copper terminal finish ensures proper contact and conductivity, enhancing the overall reliability of the transistor.

Terminal Position: SINGLE

Single terminal position simplifies installation and integration into circuit designs, improving usability and efficiency.

Case Connection: COLLECTOR

Collector case connection enhances heat dissipation and ensures efficient performance, making it suitable for high-power applications.

Nominal Transition Frequency (fT): 120 MHz

High nominal transition frequency allows for fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SB1386T100R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

180

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e2

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

2 W

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Copper (Sn/Cu)

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1 V

Trade Compliance

2SB1386T100R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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