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2SB1202T-TL-E

Onsemi

2SB1202T-TL-E by Onsemi

2SB1202T-TL-E by Onsemi is a PNP BJT with 15W power dissipation, hFE of 200, and IC of 3A. Ideal for applications requiring high current amplification in surface mount configurations at temperatures up to 150°C.

Median Price

$0.347

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 247,327 parts In-Stock

1+ parts

-

100+ parts

$0.455

1k+ parts

-

10k+ parts

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247,327

-

$0.455

-

-

Verical

USA . 223,300 parts In-Stock

1+ parts

-

100+ parts

-

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-

10k+ parts

$0.276

223,300

-

-

-

$0.276

Rochester

USA . 222,900 parts In-Stock

1+ parts

-

100+ parts

$0.266

1k+ parts

$0.220

10k+ parts

$0.197

222,900

-

$0.266

$0.220

$0.197

Flip Electronics (Authorized)

USA . 700 parts In-Stock

1+ parts

-

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-

1k+ parts

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700

-

-

-

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Element14

Singapore . 127 parts In-Stock

1+ parts

-

100+ parts

$0.623

1k+ parts

-

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127

-

$0.623

-

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Mouser Electronics

USA . 66 parts In-Stock

1+ parts

-

100+ parts

-

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$0.347

10k+ parts

$0.253

66

-

-

$0.347

$0.253

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 521 parts In-Stock

1+ parts

$0.232

100+ parts

-

1k+ parts

-

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521

$0.232

-

-

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Nova Conductors

Japan . 41 parts In-Stock

1+ parts

$0.380

100+ parts

-

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41

$0.380

-

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Vyrian

USA . 138,628 parts In-Stock

1+ parts

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138,628

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Chip Stock

USA . 62,000 parts In-Stock

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62,000

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ACDS - Activité Composants Distribution Service

France . 2,100 parts In-Stock

1+ parts

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100+ parts

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2,100

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Flip Electronics

USA . 700 parts In-Stock

1+ parts

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700

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Cyclops Electronics Ltd

UK . 240 parts In-Stock

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240

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 140,051 parts In-Stock

1+ parts

$0.207

100+ parts

-

1k+ parts

-

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140,051

$0.207

-

-

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Corphita

USA . 749 parts In-Stock

1+ parts

$0.220

100+ parts

-

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749

$0.220

-

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Corohmni

South Africa . 287 parts In-Stock

1+ parts

$0.244

100+ parts

-

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287

$0.244

-

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Argo Parts USA

USA . 4,017 parts In-Stock

1+ parts

$0.380

100+ parts

-

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10k+ parts

$0.369

4,017

$0.380

-

-

$0.369

QUARKTWIN TECHNOLOGY LTD

USA . 26,634 parts In-Stock

1+ parts

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26,634

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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Metaverse IC Inc.

Canada . 8,000 parts In-Stock

1+ parts

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8,000

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-

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TANS Electronics

Latvia . 7,598 parts In-Stock

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7,598

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Problanco Electronics

Mexico . 7,407 parts In-Stock

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7,407

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Perfect Parts

USA . 4,704 parts In-Stock

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4,704

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SupplyDigital Components

Austria . 3,434 parts In-Stock

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3,434

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Kulean Microsystems

USA . 2,997 parts In-Stock

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2,997

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Cyclops Electronics Ltd (Excess)

UK . 2,100 parts In-Stock

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2,100

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Assy Fe

Spain . 1,000 parts In-Stock

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1,000

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Kepictronics

USA . 400 parts In-Stock

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400

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UHIMA Technologies

Türkiye . 295 parts In-Stock

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295

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Continental Prestige Electronics

USA . 127 parts In-Stock

1+ parts

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100+ parts

$0.351

1k+ parts

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127

-

$0.351

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Overview

Enhance your electronic projects with the high-performance 2SB1202T-TL-E PNP transistor by Onsemi. Known for their superior quality and reliability, Onsemi delivers cutting-edge components that meet the demands of modern technology. Ideal for small signal applications, this transistor offers exceptional power dissipation and a high DC current gain. Whether you're designing amplifiers, switches, or voltage regulators, the 2SB1202T-TL-E provides unmatched value, efficiency, and precision to bring your creations to life. Elevate your projects with Onsemi's innovative solutions today.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this product suitable for such applications.

Configuration: SINGLE

Single configuration transistors are easy to work with and are often preferred in simpler circuits, making this product user-friendly.

Surface Mount: YES

Surface mount transistors are space-saving and easy to integrate into compact electronic designs, making this product ideal for small-scale applications.

Maximum Power Dissipation (Abs): 15 W

With a high maximum power dissipation, this product can handle more power without overheating, ensuring reliable performance in demanding applications.

Minimum DC Current Gain (hFE): 200

A minimum DC current gain of 200 means that this transistor is efficient in amplification tasks, providing consistent and accurate signal amplification.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this product to function effectively in a variety of environmental conditions, enhancing its versatility.

Maximum Collector Current (IC): 3 A

With a maximum collector current of 3 A, this transistor can handle relatively high current loads, making it suitable for power circuit applications.

Terminal Finish: TIN BISMUTH

The TIN BISMUTH terminal finish provides good solderability and a reliable electrical connection, improving the overall quality and durability of the product.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures quick and efficient soldering during the manufacturing process, reducing production time and costs.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C allows for reliable and secure solder joints, ensuring the long-term stability and performance of the product.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SB1202T-TL-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

2SB1202T-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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