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2SB1188T100Q

ROHM

2SB1188T100Q by ROHM

ROHM's 2SB1188T100Q is a PNP BJT transistor with VCEsat of 0.8V, hFE of 120, and IC of 2A. Ideal for amplifier applications due to its small outline package style and high transition frequency of 100MHz. With a max operating temperature of 150°C, it offers reliable performance in various electronic circuits.

Median Price

$0.722

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Mouser Electronics

USA . 4,378 parts In-Stock

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DigiKey

USA . 23 parts In-Stock

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Element14

Singapore . 739 parts In-Stock

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Nova Conductors

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IBS Electronics

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NAC Semi

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PC Components Company LLC

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Connector Distribution Corp

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Right Parts Inc.

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Ampacity Inc.

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Netroflash

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Continental Prestige Electronics

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Advanced Electronics

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Corohmni

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Epart123

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Cyclops Electronics Ltd (Excess)

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Overview

Enhance your electronic projects with the 2SB1188T100Q by ROHM, a top-quality Small Signal Bipolar Junction Transistor. Manufactured with precision and expertise, this PNP transistor is perfect for amplifier applications, offering reliable performance and efficiency. With a maximum collector-emitter voltage of 32V and a minimum DC current gain of 120, this transistor ensures optimal functionality. Trust ROHM for exceptional quality and choose the 2SB1188T100Q for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching and amplification circuits, offering versatility in design.

Configuration: SINGLE

Single configuration transistors are easier to integrate into circuits and require less complex circuitry.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring high performance in audio and signal processing applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and space in manufacturing.

Maximum VCEsat: 0.8 V

Low VCEsat helps minimize power loss and improve efficiency in amplifier circuits.

Package Shape: RECTANGULAR

Rectangular shape enables easy placement and mounting on circuit boards.

Terminal Form: FLAT

Flat terminals provide stable and secure connections for reliable performance.

No. of Terminals: 3

Three terminals allow for flexibility in circuit design and connectivity options.

Maximum Power Dissipation (Abs): 2 W

High power dissipation capability ensures reliable operation under varying load conditions.

Package Style (Meter): SMALL OUTLINE

Small outline package saves space on PCBs, making it ideal for compact designs.

Maximum Power Dissipation Ambient: 2 W

The transistor can dissipate up to 2W safely in an ambient temperature environment.

Minimum DC Current Gain (hFE): 120

High DC current gain ensures efficient amplification of input signals.

Maximum Operating Temperature: 150 °C

High operating temperature range allows for reliable performance in various environments.

Maximum Collector-Emitter Voltage: 32 V

High collector-emitter voltage rating offers reliability in high voltage applications.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability in semiconductor applications.

Maximum Collector Current (IC): 2 A

High collector current rating enables handling of larger currents for power amplification.

Terminal Position: SINGLE

Single terminal position simplifies circuit connection and layout.

Case Connection: COLLECTOR

Collector case connection allows for efficient heat dissipation, ensuring long-term reliability.

Maximum Time At Peak Reflow Temperature (s): 10

Short peak reflow time ensures safe soldering and assembly process.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance ensures reliability during soldering and assembly.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for fast switching and amplification of signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SB1188T100Q attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

32 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PSSO-F3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

2 W

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.8 V

Trade Compliance

2SB1188T100Q Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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