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2SB1188T100QR

ROHM

2SB1188T100QR by ROHM

ROHM 2SB1188T100QR is a PNP BJT transistor with VCEsat of 0.8V, hFE of 120, and IC of 2A. Ideal for amplifier applications, it operates up to 150°C with a max VCE of 32V. Suitable for surface mount assembly in small outline packages.

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AZTECH Wire

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Overview

Discover the power of the 2SB1188T100QR by ROHM, a top-quality Small Signal Bipolar Junction Transistor designed for amplifier applications. With a maximum VCEsat of 0.8V and a minimum DC current gain of 120, this PNP transistor offers superior performance in a compact package. ROHM's reputation for excellence ensures reliability and durability, making this transistor an ideal choice for your electronics projects. Upgrade your amplifiers with the 2SB1188T100QR and experience enhanced functionality and precision.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the transistor lightweight and durable, suitable for a wide range of applications.

Polarity or Channel Type: PNP

This PNP configuration allows for easy integration into existing circuit designs.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity.

Transistor Application: AMPLIFIER

Ideal for use in amplifier circuits to boost signals without distortion.

Surface Mount: YES

Allows for easy and secure mounting on circuit boards, saving space and facilitating automated assembly processes.

Maximum VCEsat: 0.8 V

This low VCEsat value indicates high efficiency and minimal power loss during operation.

Package Shape: RECTANGULAR

The rectangular shape provides a standardized form factor for easy integration into various applications.

Terminal Form: FLAT

The flat terminal form allows for easy soldering and secure connections on PCBs.

No. of Terminals: 3

The 3 terminals provide the necessary connectivity for proper transistor operation.

Package Style: SMALL OUTLINE

The small outline package style saves space and allows for dense circuit board layouts.

Maximum Power Dissipation Ambient: 2 W

With a high power dissipation rating, this transistor can handle high-power applications without overheating.

Minimum DC Current Gain (hFE): 120

This high hFE value ensures consistent and reliable amplification of signals.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for reliable performance in a variety of environments.

Maximum Collector-Emitter Voltage: 32 V

This high voltage rating ensures the transistor can handle large voltage differentials without damage.

Transistor Element Material: SILICON

Silicon is a reliable and widely-used semiconductor material known for its durability and efficiency.

Maximum Collector Current (IC): 2 A

This high current rating allows the transistor to handle large amounts of current without saturation.

Terminal Finish: Tin/Copper (Sn/Cu)

The tin/copper finish provides corrosion resistance and excellent solderability for long-term reliability.

Terminal Position: SINGLE

The single terminal position simplifies circuit design and ensures easy connectivity.

Case Connection: COLLECTOR

The collector connection allows for efficient current flow and optimal transistor performance.

Maximum Time At Peak Reflow Temperature (s): 10

This short reflow time ensures proper soldering and prevents damage to the transistor during assembly.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, the transistor can withstand the soldering process without degradation.

Nominal Transition Frequency (fT): 100 MHz

This high transition frequency value indicates fast switching speeds and excellent high-frequency performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SB1188T100QR attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

32 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e2

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

2 W

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Tin/Copper (Sn/Cu)

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.8 V

Trade Compliance

2SB1188T100QR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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