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2SB1260T100Q

ROHM

2SB1260T100Q by ROHM

ROHM 2SB1260T100Q is a PNP BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 1A. It has a min. DC current gain of 120, suitable for switching applications in small outline packages at up to 150°C operating temperature.

Median Price

$0.758

Lifecycle Status

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13

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Adafruit Industries

USA . 2,000 parts In-Stock

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$0.758

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$0.690

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$0.622

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$0.758

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DigiKey

USA . 606 parts In-Stock

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$0.820

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$0.330

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$0.227

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$0.169

606

$0.820

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Verical

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$0.278

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Chip Stock

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ComSIT Distribution GmbH

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Vyrian

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VNN

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A2Z Electronics, Inc.

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ACDS - Activité Composants Distribution Service

France . 991 parts In-Stock

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PC Components Company LLC

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Bristol Electronics

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Nova Conductors

Japan . 300 parts In-Stock

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Q Components

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Ampacity Inc.

Singapore . 654 parts In-Stock

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$0.216

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CoreStaff

Japan . 593 parts In-Stock

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$0.400

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$0.207

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$0.154

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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$0.758

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$0.690

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$0.622

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Perfect Parts

USA . 10,620 parts In-Stock

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RC Electronics

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Kepictronics

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Authorized Procurement Solutions

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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Aranea Global

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Overview

Upgrade your electronic devices with the high-quality 2SB1260T100Q by ROHM. Manufactured to precision, this PNP Small Signal Bipolar Junction Transistor is perfect for switching applications. Its compact package and maximum power dissipation of 2W ensure optimal performance. With a minimum DC current gain of 120 and a maximum collector-emitter voltage of 80V, this transistor offers reliability and efficiency. Trust ROHM for cutting-edge technology that delivers value and innovation to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications and can handle high current levels, making this transistor suitable for such purposes.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity in the overall system.

Transistor Application: SWITCHING

Specifically designed for switching applications, this transistor offers high speed and efficiency in turning on and off.

Surface Mount: YES

Surface mount capability allows for easy and space-efficient PCB assembly.

Terminal Form: FLAT

Flat terminals provide good contact and soldering points for reliable connections.

Maximum Power Dissipation (Abs): 2 W

With a maximum power dissipation of 2 W, this transistor can handle moderate power levels without getting damaged.

Minimum DC Current Gain (hFE): 120

High DC current gain ensures proper amplification and signal processing in the circuit.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures in various environments.

Maximum Collector-Emitter Voltage: 80 V

High collector-emitter voltage rating allows for operation in circuits with higher voltage levels.

Transistor Element Material: SILICON

Silicon material provides good conductivity and reliability for the transistor's operation.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1 A, this transistor can handle moderate to high current levels with ease.

Terminal Finish: Tin/Copper (Sn/Cu)

Tin/copper terminal finish provides good conductivity and solderability for reliable connections.

Case Connection: COLLECTOR

Collector case connection simplifies circuit design and layout.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for high-speed operation in switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SB1260T100Q attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e2

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Copper (Sn/Cu)

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SB1260T100Q Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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