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2SB1204QTL

Onsemi

2SB1204QTL by Onsemi

The Onsemi 2SB1204QTL is a PNP BJT transistor for switching applications. It has a hFE of 70, VCE of 50V, and IC of 8A. With a fT of 130MHz, it is ideal for high-speed switching circuits in small outline packages.

Median Price

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Lifecycle Status

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2

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< 1k

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Vyrian

USA . 564 parts In-Stock

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Digiode

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Native Components

USA . 782 parts In-Stock

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$0.289

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Northwest PG Solutions

USA . 52 parts In-Stock

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Kulean Microsystems

USA . 5,036 parts In-Stock

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TANS Electronics

Latvia . 2,989 parts In-Stock

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Problanco Electronics

Mexico . 1,385 parts In-Stock

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Corphita

USA . 1,066 parts In-Stock

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SupplyDigital Components

Austria . 708 parts In-Stock

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Corohmni

South Africa . 72 parts In-Stock

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UHIMA Technologies

Türkiye . 7 parts In-Stock

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Overview

Upgrade your electronics with the high-quality 2SB1204QTL Small Signal Bipolar Junction Transistor by Onsemi. Manufactured with precision and expertise, this PNP transistor is perfect for switching applications. With a maximum collector-emitter voltage of 50V and a maximum collector current of 8A, this transistor offers reliable performance and durability. Whether you're working on amplifiers, power supplies, or motor control circuits, the 2SB1204QTL delivers exceptional value and efficiency. Trust Onsemi's reputation for excellence and elevate your projects with this versatile component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the transistor, ensuring reliability and durability.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this transistor suitable for a variety of switching tasks.

Configuration: SINGLE

Single configuration simplifies circuit design and implementation, making it easier to integrate into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring high performance and efficiency in switching tasks.

Surface Mount: YES

Surface mount capability makes it easy to mount the transistor on circuit boards, saving space and allowing for automated assembly.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement on circuit boards and easy alignment with other components.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and enable easy soldering during assembly.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces complexity in the circuit design.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the circuit board and allows for dense packing of components.

Minimum DC Current Gain (hFE): 70

A minimum DC current gain of 70 ensures consistent and reliable amplification of current in the transistor.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage of 50V, this transistor can handle higher voltage levels safely.

Transistor Element Material: SILICON

Silicon material offers high performance, reliability, and a wide operating temperature range for the transistor.

Maximum Collector Current (IC): 8 A

A maximum collector current of 8A allows the transistor to handle high current loads efficiently.

Terminal Position: SINGLE

Single terminal position simplifies the connection process and ensures proper alignment in the circuit.

Case Connection: COLLECTOR

Case connection at the collector ensures efficient heat dissipation and helps maintain the transistor's temperature within safe limits.

Nominal Transition Frequency (fT): 130 MHz

A high nominal transition frequency of 130MHz indicates fast switching speed and high-frequency performance of the transistor.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SB1204QTL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SB1204QTL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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