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BC858BWT106

ROHM

BC858BWT106 by ROHM

ROHM BC858BWT106 is a PNP BJT with 30V VCEO, 0.1A IC, and 210 hFE. Ideal for small signal applications in electronics due to its 250MHz fT, Gull Wing terminals, and compact Small Outline package. With a max operating temp of 150°C, it's suitable for various surface mount designs.

Median Price

$0.282

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Mouser Electronics

USA . 137 parts In-Stock

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$0.600

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$0.510

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$0.163

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$0.092

137

$0.600

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$0.092

Chip1Stop

Japan . 100 parts In-Stock

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$0.178

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Verical

USA . 100 parts In-Stock

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$0.282

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$0.143

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$0.081

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Arrow

USA . 100 parts In-Stock

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$0.282

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$0.143

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$0.081

100

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$0.282

$0.143

$0.081

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NAC Semi

USA . 18,000 parts In-Stock

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$0.126

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Vyrian

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Nova Conductors

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CoreStaff

Japan . 100 parts In-Stock

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$0.094

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$0.094

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$0.041

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$0.036

100

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$0.094

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$0.036

Ampacity Inc.

Singapore . 112 parts In-Stock

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$0.151

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Perfect Parts

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Overview

Unlock the power of innovation with the BC858BWT106 by ROHM. Designed to deliver exceptional performance and reliability, this Small Signal Bipolar Junction Transistor (BJT) is a game-changer in the world of electronics. Whether you're working on a DIY project or a professional application, the BC858BWT106 offers unmatched quality and precision. Trust in ROHM's reputation for excellence and take advantage of the value and benefits that this PNP transistor brings to the table. Elevate your projects with the BC858BWT106 and experience the difference that superior technology can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are ideal for low power applications and can be used in a wide range of circuits.

Configuration: SINGLE

Simplified design with only one transistor, easy to use and integrate into circuits.

Surface Mount: YES

Allows for easy installation and space-saving on PCBs.

Maximum Power Dissipation (Abs): 0.35 W

Efficient power handling capability, ensuring reliability in various applications.

Minimum DC Current Gain (hFE): 210

High current gain ensures optimal performance and efficiency in amplification circuits.

Maximum Operating Temperature: 150 °C

Wide temperature range allows for operation in different environmental conditions.

Maximum Collector-Emitter Voltage: 30 V

Suitable for low voltage applications, providing flexibility in circuit design.

Maximum Collector Current (IC): 0.1 A

Adequate current handling capacity for low power applications.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency allows for high-frequency applications such as RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC858BWT106 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

210

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC858BWT106 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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