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BC857BTT1G

Onsemi

BC857BTT1G by Onsemi

BC857BTT1G by Onsemi is a PNP BJT transistor with 3 terminals, suitable for amplifier applications. It has a max collector-emitter voltage of 45V, DC current gain of 220 (hFE), and operates at up to 150°C. This small outline package with Gull Wing terminals is surface mountable, making it ideal for compact electronic designs.

Median Price

$0.036

Lifecycle Status

Suppliers In-Stock

28

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 26,039 parts In-Stock

1+ parts

$0.160

100+ parts

$0.061

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$0.039

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$0.026

26,039

$0.160

$0.061

$0.039

$0.026

Adafruit Industries

USA . 350 parts In-Stock

1+ parts

$0.522

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$0.496

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$0.496

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350

$0.522

$0.496

$0.496

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EBV Elektronik

Germany . 4,734,000 parts In-Stock

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Avnet

USA . 462,000 parts In-Stock

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Newark

USA . 369,000 parts In-Stock

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Arrow

USA . 212,852 parts In-Stock

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$0.036

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Chip1Stop

Japan . 212,852 parts In-Stock

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Verical

USA . 212,852 parts In-Stock

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$0.036

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$0.025

212,852

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$0.025

Rochester

USA . 54,000 parts In-Stock

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$0.019

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$0.016

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$0.014

54,000

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$0.019

$0.016

$0.014

Element14

Singapore . 27,000 parts In-Stock

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$0.039

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DigiKey

USA . 9,914 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 1,409 parts In-Stock

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Nova Conductors

Japan . 1,000 parts In-Stock

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$0.036

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$0.036

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Maritex

Poland . 496 parts In-Stock

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$0.053

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$0.014

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$0.011

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496

$0.053

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$0.011

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TME

Poland . 5,687 parts In-Stock

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$0.110

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$0.046

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$0.029

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$0.020

5,687

$0.110

$0.046

$0.029

$0.020

Component Electronics Inc.

Canada . 990 parts In-Stock

1+ parts

$0.380

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$0.290

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$0.250

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990

$0.380

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IBS Electronics

USA . 1,191,000 parts In-Stock

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Flip Electronics

USA . 218,929 parts In-Stock

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Vyrian

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NAC Semi

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Chip Stock

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LIBRA Elektronik GmbH

Germany . 34,787 parts In-Stock

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Cyclops Electronics Ltd

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Bristol Electronics

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ComSIT Distribution GmbH

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ComSIT USA

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Q Components

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VNN

France . 942 parts In-Stock

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Ampacity Inc.

Singapore . 113,778 parts In-Stock

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Semicontronic

India . 69,472 parts In-Stock

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Corohmni

South Africa . 476 parts In-Stock

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Corphita

USA . 54 parts In-Stock

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Argo Parts USA

USA . 2,072 parts In-Stock

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2,072

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Continental Prestige Electronics

USA . 1,175 parts In-Stock

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$0.035

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Bastille Electronics

Australia . 100 parts In-Stock

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$0.036

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$0.034

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$0.032

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$0.032

100

$0.036

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$0.032

Modulus Dynamics

Lithuania . 650 parts In-Stock

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$0.040

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$0.038

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Component Stockers USA

USA . 4,779 parts In-Stock

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$0.140

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$0.030

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$0.010

4,779

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$0.522

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$0.496

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$0.496

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350

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Aztec Data Supply Inc.

USA . 1,127 parts In-Stock

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$0.767

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Perfect Parts

USA . 574,134 parts In-Stock

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Authorized Procurement Solutions

USA . 417,000 parts In-Stock

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Glotronic Ltd.

UK . 254,400 parts In-Stock

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RC Electronics

USA . 120,653 parts In-Stock

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GreenTree Electronics

Israel . 33,000 parts In-Stock

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Kepictronics

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Lixinc

USA . 8,352 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,996 parts In-Stock

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SupplyDigital Components

Austria . 5,722 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,664 parts In-Stock

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Kulean Microsystems

USA . 2,494 parts In-Stock

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Problanco Electronics

Mexico . 2,419 parts In-Stock

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TANS Electronics

Latvia . 2,186 parts In-Stock

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UHIMA Technologies

Türkiye . 345 parts In-Stock

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Robosynatics

Brazil . 250 parts In-Stock

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$1.517

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$1.517

Lucentia Tech

USA . 250 parts In-Stock

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$1.517

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$1.517

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$1.517

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$1.517

Overview

Enhance your electronic projects with the BC857BTT1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, this PNP transistor is perfect for amplifier applications, offering exceptional performance and reliability. Its compact design makes it ideal for space-constrained projects, while its maximum power dissipation of 0.3W ensures efficient operation. Trust in Onsemi's reputation for excellence and take your projects to the next level with the BC857BTT1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: PNP

Suitable for applications requiring a PNP transistor, offering versatility in circuit design.

Configuration: SINGLE

Simplified circuit design with only one transistor needed for the amplifier application.

Transistor Application: AMPLIFIER

Designed specifically for amplifier circuits, ensuring optimal performance in amplification tasks.

Surface Mount: YES

Ease of installation on PCBs, saving time and effort during assembly.

Maximum Power Dissipation (Abs): 0.3 W

Can handle moderate power dissipation, suitable for low to medium power applications.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments without compromising performance.

Maximum Collector-Emitter Voltage: 45 V

Suitable for applications requiring a maximum voltage of 45 V, providing flexibility in circuit design.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for high-frequency signal amplification, making it ideal for applications requiring fast switching.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC857BTT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

220

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC857BTT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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