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BC857BS-7-F

Diodes Incorporated

BC857BS-7-F by Diodes Incorporated

BC857BS-7-F by Diodes Inc. is a PNP small signal BJT with 2 separate elements, suitable for switching applications. It has a max collector-emitter voltage of 45V, max collector current of 0.1A, and min DC current gain of 220.

Median Price

$0.096

Lifecycle Status

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26

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1k+

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Mouser Electronics

USA . 5,483 parts In-Stock

1+ parts

$0.250

100+ parts

$0.115

1k+ parts

$0.078

10k+ parts

$0.067

5,483

$0.250

$0.115

$0.078

$0.067

DigiKey

USA . 1 parts In-Stock

1+ parts

$0.250

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$0.096

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$0.062

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1

$0.250

$0.096

$0.062

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Adafruit Industries

USA . 350 parts In-Stock

1+ parts

$0.636

100+ parts

$0.579

1k+ parts

$0.522

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350

$0.636

$0.579

$0.522

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Arrow

USA . 9,000 parts In-Stock

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$0.023

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$0.023

Verical

USA . 9,000 parts In-Stock

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$0.035

9,000

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Element14

Singapore . 7,515 parts In-Stock

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$0.096

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$0.067

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$0.066

7,515

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$0.066

Farnell

UK . 7,490 parts In-Stock

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$0.075

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$0.048

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$0.047

7,490

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$0.075

$0.048

$0.047

Distributors (In-Stock)

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Nova Conductors

Japan . 300 parts In-Stock

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$0.087

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300

$0.087

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Bristol Electronics

USA . 2,385 parts In-Stock

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$0.140

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$0.070

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$0.028

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2,385

$0.140

$0.070

$0.028

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TME

Poland . 3,741 parts In-Stock

1+ parts

$0.220

100+ parts

$0.089

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$0.052

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$0.037

3,741

$0.220

$0.089

$0.052

$0.037

NAC Semi

USA . 285,000 parts In-Stock

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Vyrian

USA . 65,044 parts In-Stock

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Chip Stock

USA . 46,000 parts In-Stock

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IBS Electronics

USA . 36,000 parts In-Stock

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$0.048

36,000

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$0.048

ComSIT Distribution GmbH

Germany . 16,730 parts In-Stock

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ComSIT USA

USA . 16,730 parts In-Stock

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Rutronik

Germany . 9,000 parts In-Stock

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$0.032

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$0.032

Martec Srl

Italy . 2,839 parts In-Stock

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Semi Source

USA . 2,630 parts In-Stock

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2,630

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J2 Sourcing AB

Sweden . 2,600 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,385 parts In-Stock

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2,385

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Dan-Mar Components

USA . 2,385 parts In-Stock

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VNN

France . 2,061 parts In-Stock

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PC Components Company LLC

USA . 724 parts In-Stock

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Elcom Components

USA . 160 parts In-Stock

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160

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Prism Electronics

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 237,660 parts In-Stock

1+ parts

$0.018

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237,660

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Semicontronic

India . 236,143 parts In-Stock

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$0.018

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236,143

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Argo Parts USA

USA . 3,917 parts In-Stock

1+ parts

$0.069

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$0.067

3,917

$0.069

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$0.067

Modulus Dynamics

Lithuania . 750 parts In-Stock

1+ parts

$0.089

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$0.088

1k+ parts

$0.086

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750

$0.089

$0.088

$0.086

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Continental Prestige Electronics

USA . 8,870 parts In-Stock

1+ parts

$0.187

100+ parts

$0.069

1k+ parts

$0.041

10k+ parts

$0.029

8,870

$0.187

$0.069

$0.041

$0.029

Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.636

100+ parts

$0.579

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$0.522

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350

$0.636

$0.579

$0.522

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Aztec Data Supply Inc.

USA . 125 parts In-Stock

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$1.470

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125

$1.470

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Corohmni

South Africa . 95 parts In-Stock

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$1.566

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95

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Perfect Parts

USA . 2,716,859 parts In-Stock

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2,716,859

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CPlus Electronics

USA . 1,152,000 parts In-Stock

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Eastek

USA . 1,119,000 parts In-Stock

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GreenTree Electronics

Israel . 960,000 parts In-Stock

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Metaverse IC Inc.

Canada . 80,000 parts In-Stock

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Robosynatics

Brazil . 16,688 parts In-Stock

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$1.368

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$1.340

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$1.340

16,688

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$1.368

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$1.340

Lucentia Tech

USA . 16,688 parts In-Stock

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$1.368

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$1.340

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$1.340

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$1.340

Lixinc

USA . 15,889 parts In-Stock

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Formix International (Excess)

India . 15,352 parts In-Stock

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Futuretech Components

Singapore . 10,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 7,634 parts In-Stock

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Kepictronics

USA . 7,000 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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3,790

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Assy Fe

Spain . 3,000 parts In-Stock

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Overview

Discover the BC857BS-7-F by Diodes Incorporated, a high-quality Small Signal Bipolar Junction Transistor (BJT) designed for switching applications. With its PNP configuration and separate, 2-element design, this surface-mount transistor offers exceptional performance and reliability. Packaged in a durable PLASTIC/EPOXY body with gull wing terminals, it is easy to install and use. Boasting a maximum collector-emitter voltage of 45V and a minimum DC current gain of 220, this transistor delivers outstanding power dissipation and efficiency. Whether you need to switch signals or control currents, the BC857BS-7-F is the perfect choice. Trust Diodes Incorporated for cutting-edge technology and unmatched value in electronic components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of environments.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this transistor ideal for such purposes.

Configuration: SEPARATE, 2 ELEMENTS

Having 2 separate elements allows for more precise control and versatility in circuit designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

The ability to be surface mounted saves space and simplifies assembly in electronic devices.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2 W, this transistor can handle moderate power levels efficiently.

Minimum DC Current Gain (hFE): 220

A high minimum DC current gain ensures consistent and reliable amplification in circuits.

Maximum Operating Temperature: 125 °C

Can operate in higher temperature environments without degradation in performance.

Maximum Collector-Emitter Voltage: 45 V

A high maximum collector-emitter voltage rating provides a safety margin for voltage spikes.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for fast switching speeds in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC857BS-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

220

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC857BS-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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