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BC856BDW1T1G

Onsemi

BC856BDW1T1G by Onsemi

BC856BDW1T1G by Onsemi is a PNP BJT with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.38W, hFE of 220, and operates up to 150°C. With a max collector-emitter voltage of 65V and transition frequency of 100MHz, it's suitable for small outline packages in surface mount configurations.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

43

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 55,694 parts In-Stock

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Distrelec

Netherlands . 9,520 parts In-Stock

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$0.120

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$0.098

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$0.076

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Arrow

USA . 126,000 parts In-Stock

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$0.200

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$0.071

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$0.044

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$0.028

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$0.071

$0.044

$0.028

Mouser Electronics

USA . 69,389 parts In-Stock

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$0.210

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$0.079

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$0.051

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69,389

$0.210

$0.079

$0.051

$0.035

DigiKey

USA . 5,811 parts In-Stock

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Adafruit Industries

USA . 60 parts In-Stock

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$1.418

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60

$1.418

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$1.347

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Avnet

USA . 3,270,000 parts In-Stock

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EBV Elektronik

Germany . 564,000 parts In-Stock

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Canada . 159,000 parts In-Stock

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Verical

USA . 126,000 parts In-Stock

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Farnell

UK . 67,375 parts In-Stock

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Element14

Singapore . 65,340 parts In-Stock

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USA . 23,221 parts In-Stock

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Master Electronics

USA . 6,000 parts In-Stock

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Chip1Stop

Japan . 5,900 parts In-Stock

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Distributors (In-Stock)

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Flip Electronics

USA . 1,103 parts In-Stock

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Digiode

USA . 1,725 parts In-Stock

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Nova Conductors

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Poland . 641 parts In-Stock

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IBS Electronics

USA . 1,479,559 parts In-Stock

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Cyclops Electronics Ltd

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Micros sp.j. W. Kędra i J. Lic

Poland . 3,000 parts In-Stock

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ComSIT USA

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Poland . 1,480 parts In-Stock

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Prism Electronics

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USA . 100 parts In-Stock

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Italy . 16 parts In-Stock

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Semicontronic

India . 215,765 parts In-Stock

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Ampacity Inc.

Singapore . 209,327 parts In-Stock

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Corphita

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Corohmni

South Africa . 230 parts In-Stock

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Component Stockers USA

USA . 382,411 parts In-Stock

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Argo Parts USA

USA . 122 parts In-Stock

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Bastille Electronics

Australia . 18 parts In-Stock

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Advanced Electronics

New Zealand . 60 parts In-Stock

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$1.347

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Aztec Data Supply Inc.

USA . 3,402 parts In-Stock

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Perfect Parts

USA . 1,334,862 parts In-Stock

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GreenTree Electronics

Israel . 1,188,000 parts In-Stock

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Authorized Procurement Solutions

USA . 744,000 parts In-Stock

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RC Electronics

USA . 119,644 parts In-Stock

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Continental Prestige Electronics

USA . 80,175 parts In-Stock

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Eastek

USA . 72,000 parts In-Stock

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USA . 6,756 parts In-Stock

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Mexico . 4,315 parts In-Stock

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Germany . 2,430 parts In-Stock

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UHIMA Technologies

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Brazil . 250 parts In-Stock

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Lucentia Tech

USA . 250 parts In-Stock

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Overview

Looking for a high-quality Small Signal Bipolar Junction Transistor with PNP polarity and excellent performance? Look no further than the BC856BDW1T1G by Onsemi! This versatile transistor is perfect for amplifier applications and comes in a convenient surface-mount package. With a minimum DC current gain of 220 and a maximum operating temperature of 150°C, this transistor offers exceptional reliability and efficiency. Trust Onsemi's reputation for top-notch components and upgrade your electronics with the BC856BDW1T1G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package material provides durability and protection for the transistor, making it suitable for a variety of environments.

Polarity or Channel Type: PNP

PNP configuration allows for easy integration into existing circuit designs and compatibility with other PNP transistors.

Configuration: SEPARATE, 2 ELEMENTS

Separate 2-element configuration provides flexibility in circuit design and allows for customization of amplification levels.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring reliable and efficient performance in amplifying signals.

Surface Mount: YES

Surface mount capability allows for easy and space-saving PCB assembly, making it suitable for compact electronic devices.

Package Shape: RECTANGULAR

Rectangular package shape provides easy handling and integration into circuit boards, improving overall assembly efficiency.

Maximum Power Dissipation (Abs): 0.38 W

High power dissipation capacity ensures reliable operation under varying load conditions, making it suitable for demanding applications.

Minimum DC Current Gain (hFE): 220

High DC current gain ensures efficient signal amplification and reliable performance in amplifier circuits.

Maximum Operating Temperature: 150 °C

High operating temperature range allows for reliable operation in a variety of environments, ensuring long-term stability.

Maximum Collector-Emitter Voltage: 65 V

High collector-emitter voltage rating provides flexibility and protection against voltage spikes, enhancing the durability of the transistor.

Transistor Element Material: SILICON

Silicon material provides high conductivity and reliability, ensuring stable performance over a wide range of operating conditions.

Maximum Collector Current (IC): 0.1 A

High collector current rating allows for reliable operation under varying load conditions, making it suitable for demanding applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish ensures good solderability and reliability in solder joints, improving overall performance and longevity.

Terminal Position: DUAL

Dual terminal position allows for easy and secure connection to external circuits, ensuring reliable signal transmission.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for efficient amplification of high-frequency signals, making it suitable for a wide range of applications requiring fast signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC856BDW1T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

65 V

Configuration:

Minimum DC Current Gain (hFE):

220

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC856BDW1T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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