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BC857B-7-F

Diodes Incorporated

BC857B-7-F by Diodes Incorporated

BC857B-7-F by Diodes Inc. is a PNP small signal BJT transistor with a max collector-emitter voltage of 45V and a max collector current of 0.1A. It is commonly used for switching applications due to its high DC current gain (hFE) of 220 and fast nominal transition frequency (fT) of 200MHz.

Median Price

$0.068

Lifecycle Status

Suppliers In-Stock

29

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 200,155 parts In-Stock

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$0.200

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$0.077

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$0.049

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200,155

$0.200

$0.077

$0.049

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Mouser Electronics

USA . 13,877 parts In-Stock

1+ parts

$0.200

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$0.077

1k+ parts

$0.050

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$0.036

13,877

$0.200

$0.077

$0.050

$0.036

Adafruit Industries

USA . 500 parts In-Stock

1+ parts

$1.173

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$1.067

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$0.962

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500

$1.173

$1.067

$0.962

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Verical

USA . 5,574,000 parts In-Stock

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$0.017

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$0.017

Arrow

USA . 315,000 parts In-Stock

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$0.022

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Avnet

USA . 9,000 parts In-Stock

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Element14

Singapore . 3,660 parts In-Stock

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$0.062

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$0.038

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$0.037

3,660

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$0.062

$0.038

$0.037

Newark

USA . 3,040 parts In-Stock

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$0.075

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$0.048

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3,040

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$0.075

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Farnell

UK . 190 parts In-Stock

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$0.062

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$0.045

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$0.040

190

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$0.062

$0.045

$0.040

Distributors (In-Stock)

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Maritex

Poland . 158 parts In-Stock

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$0.029

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$0.023

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$0.019

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158

$0.029

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IBS Electronics

USA . 129,000 parts In-Stock

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$0.041

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$0.033

129,000

$0.041

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$0.033

Nova Conductors

Japan . 150 parts In-Stock

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$0.044

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150

$0.044

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TME

Poland . 9,070 parts In-Stock

1+ parts

$0.190

100+ parts

$0.073

1k+ parts

$0.041

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$0.026

9,070

$0.190

$0.073

$0.041

$0.026

Vyrian

USA . 612,737 parts In-Stock

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612,737

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NAC Semi

USA . 99,000 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 46,628 parts In-Stock

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Chip Stock

USA . 23,500 parts In-Stock

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Rutronik

Germany . 12,000 parts In-Stock

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$0.017

Component Sense

UK . 5,895 parts In-Stock

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5,895

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A&K Electronics

USA . 2,795 parts In-Stock

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2,795

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Rotakorn

Sweden . 2,795 parts In-Stock

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Bristol Electronics

USA . 2,795 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,610 parts In-Stock

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ComSIT USA

USA . 2,610 parts In-Stock

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Rebound Electronics

UK . 2,415 parts In-Stock

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Elcom Components

USA . 2,100 parts In-Stock

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Lonics

Poland . 1,476 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,306 parts In-Stock

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VNN

France . 801 parts In-Stock

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801

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Distributors (Availability)

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Ampacity Inc.

Singapore . 612,451 parts In-Stock

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$0.010

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612,451

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Semicontronic

India . 611,340 parts In-Stock

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$0.010

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$0.010

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$0.010

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611,340

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Corohmni

South Africa . 16 parts In-Stock

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$0.039

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16

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Argo Parts USA

USA . 2,225 parts In-Stock

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$0.039

2,225

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Bastille Electronics

Australia . 10 parts In-Stock

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$0.044

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$0.042

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$0.040

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$0.039

10

$0.044

$0.042

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$0.039

Modulus Dynamics

Lithuania . 600 parts In-Stock

1+ parts

$0.046

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$0.045

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$0.044

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600

$0.046

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$0.044

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$1.173

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$1.067

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$0.962

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500

$1.173

$1.067

$0.962

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Aztec Data Supply Inc.

USA . 3,956 parts In-Stock

1+ parts

$1.853

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3,956

$1.853

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Perfect Parts

USA . 94,634 parts In-Stock

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94,634

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Eastek

USA . 81,000 parts In-Stock

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Metaverse IC Inc.

Canada . 80,000 parts In-Stock

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Lixinc

USA . 19,226 parts In-Stock

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GreenTree Electronics

Israel . 18,000 parts In-Stock

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Robosynatics

Brazil . 16,584 parts In-Stock

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$0.038

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$0.037

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16,584

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$0.037

Lucentia Tech

USA . 16,584 parts In-Stock

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$0.038

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$0.037

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$0.037

16,584

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$0.037

Cyclops Electronics Ltd (Excess)

UK . 9,771 parts In-Stock

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9,771

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Continental Prestige Electronics

USA . 4,114 parts In-Stock

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$0.052

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$0.023

4,114

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Computer Components Inc. - USA

USA . 3,000 parts In-Stock

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Overview

Discover the BC857B-7-F, a top-quality small signal bipolar junction transistor (BJT) manufactured by Diodes Incorporated. Designed for switching applications, this PNP transistor offers exceptional performance and reliability. With its surface mount capability and compact rectangular package shape, it is easy to integrate into various electronic devices. Featuring a maximum collector-emitter voltage of 45V and a minimum DC current gain of 220, this transistor delivers impressive power dissipation and efficiency. Trust Diodes Incorporated to provide you with superior electronic components that meet your needs. Upgrade your projects with the BC857B-7-F and experience the benefits of reliable, high-performance transistors.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides good insulation and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type:

PNP - The PNP configuration allows for easy control of current flow, making it suitable for switching applications.

Configuration:

SINGLE - This single configuration simplifies circuit design and makes it easier to integrate into electronic systems.

Transistor Application:

SWITCHING - With its emphasis on fast on/off switching, this transistor is well-suited for applications that require rapid switching speeds.

Surface Mount:

YES - The surface mount capability allows for easy and efficient placement on circuit boards, improving manufacturing and assembly processes.

Package Shape:

RECTANGULAR - The rectangular shape provides compatibility with standard board layouts and facilitates easy mounting and positioning.

Terminal Form:

GULL WING - The gull wing terminal form ensures secure and reliable connections, enhancing the overall performance and reliability of the transistor.

No. of Elements:

1 - This transistor contains a single element, simplifying circuit design and reducing complexity.

No. of Terminals:

3 - With three terminals, this transistor offers versatile connectivity options, enabling flexibility in circuit configurations.

Maximum Power Dissipation (Abs):

0.3 W - The high maximum power dissipation allows for efficient handling of power and ensures the transistor's durability and reliability in demanding applications.

Package Style (Meter):

SMALL OUTLINE - The small outline package style enables space-saving integration in compact electronic devices, making it ideal for miniaturized designs.

Minimum DC Current Gain (hFE):

220 - The high minimum DC current gain ensures stable and consistent amplification of input signals, providing reliable performance in various applications.

Maximum Operating Temperature:

150 °C - The high maximum operating temperature allows the transistor to withstand elevated temperatures and ensures reliable operation even in demanding environments.

Maximum Collector-Emitter Voltage:

45 V - The high maximum collector-emitter voltage rating provides flexibility for various circuit requirements and enhances the transistor's compatibility.

Transistor Element Material:

SILICON - Silicon is a widely used material known for its excellent electronic properties, ensuring reliable and efficient transistor performance.

Maximum Collector Current (IC):

0.1 A - The high maximum collector current handling capability allows the transistor to handle significant current loads, making it suitable for a wide range of applications.

Terminal Finish:

MATTE TIN - The matte tin terminal finish provides good conductivity, corrosion resistance, and solderability, ensuring reliable electrical connections and ease of assembly.

Terminal Position:

DUAL - The dual terminal position offers flexibility in circuit design and allows for versatile connectivity options.

Moisture Sensitivity Level (MSL):

1 - The low moisture sensitivity level ensures that the transistor is less susceptible to moisture-related issues, enhancing its reliability and lifespan.

Maximum Time At Peak Reflow Temperature (s):

30 - This specification provides guidelines for the maximum time the transistor can be exposed to the peak reflow temperature during soldering, ensuring proper and safe assembly.

Peak Reflow Temperature °C:

260 - The high peak reflow temperature enables effective soldering and ensures reliable connections, contributing to the overall reliability of the transistor.

Nominal Transition Frequency (fT):

200 MHz - The high nominal transition frequency indicates the transistor's capability to amplify high-frequency signals accurately, making it suitable for applications that require fast signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC857B-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

220

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC857B-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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