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BC857C,235

NXP Semiconductors

BC857C,235 by NXP Semiconductors

NXP Semiconductors' BC857C,235 is a PNP BJT transistor for switching applications. With VCEsat of 0.65V and hFE of 420, it operates at max 150°C with IC of 0.1A. Its small outline package with GULL WING terminals makes it ideal for surface mount designs.

Median Price

$0.021

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Adafruit Industries

USA . 20 parts In-Stock

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Arrow

USA . 5,708 parts In-Stock

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$0.190

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$0.043

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$0.026

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5,708

$0.190

$0.043

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$0.017

Rochester

USA . 9,260,907 parts In-Stock

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DigiKey

USA . 9,260,907 parts In-Stock

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Verical

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Elektronika Sales Private Limited

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TTI

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Chip1Stop

Japan . 19,770 parts In-Stock

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Digiode

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Nova Conductors

Japan . 80 parts In-Stock

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NAC Semi

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Chip Stock

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IBS Electronics

USA . 30,000 parts In-Stock

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Vyrian

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Anansix

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VNN

France . 1,498 parts In-Stock

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Sensible Micro Corp

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ComSIT Distribution GmbH

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Semicontronic

India . 2,165,161 parts In-Stock

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Ampacity Inc.

Singapore . 2,164,884 parts In-Stock

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AZTECH Wire

Italy . 10,343 parts In-Stock

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Argo Parts USA

USA . 4,942 parts In-Stock

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Corphita

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Modulus Dynamics

Lithuania . 15,067 parts In-Stock

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Corohmni

South Africa . 44 parts In-Stock

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Advanced Electronics

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Netroflash

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Aztec Data Supply Inc.

USA . 1,618 parts In-Stock

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Continental Prestige Electronics

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Infinite Electronics LLP (Excess)

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Eastek

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GreenTree Electronics

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Perfect Parts

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Robosynatics

Brazil . 10,927 parts In-Stock

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Lucentia Tech

USA . 10,927 parts In-Stock

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UNI Independent Distributors

Spain . 7,689 parts In-Stock

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Supply Digital

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Overview

Elevate your circuit design with the BC857C,235 by NXP Semiconductors. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor offers reliable performance in switching applications. The PNP configuration and high DC current gain ensure seamless operation while the low VCE sat and small outline package enhance efficiency. Trust in NXP Semiconductors to deliver quality and value with every component, empowering you to create innovative solutions that exceed expectations. Experience the difference with the BC857C,235 - where excellence meets functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable plastic/epoxy material ensures longevity and reliability in various operating conditions.

Polarity or Channel Type: PNP

PNP type is suitable for applications requiring current sourcing, making it versatile for different circuit designs.

Configuration: SINGLE

Single configuration simplifies circuit design and ensures easy integration into various electronic systems.

Transistor Application: SWITCHING

Designed for switching applications, offering fast switching speeds and efficient operation.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving space and reducing overall product size.

Maximum VCEsat: 0.65 V

Low VCEsat minimizes power dissipation and improves efficiency in switching applications.

Package Shape: RECTANGULAR

Rectangular package shape facilitates easy placement and soldering on the PCB, enhancing manufacturing efficiency.

Terminal Form: GULL WING

Gull wing terminal form provides mechanical stability and ease of soldering during assembly.

No. of Terminals: 3

3 terminals provide necessary connections for basic transistor operation while keeping the package size compact.

Maximum Power Dissipation (Abs): 0.25 W

Low power dissipation allows for efficient operation and helps in preventing overheating of the transistor.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and is ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 420

High minimum DC current gain ensures stable and reliable amplification in various circuit applications.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for reliable performance in different environments and applications.

Maximum Collector-Emitter Voltage: 45 V

High collector-emitter voltage rating provides flexibility in circuit design and prevents voltage breakdown issues.

Transistor Element Material: SILICON

Silicon material offers high performance, reliability, and compatibility with various semiconductor processes.

Maximum Collector Current (IC): 0.1 A

High collector current rating allows for handling larger current loads in different circuit configurations.

Terminal Finish: TIN

Tin terminal finish provides good solderability and electrical conductivity for reliable connections.

Terminal Position: DUAL

Dual terminal position allows for easy mounting and connection in various PCB layouts and designs.

Maximum Time At Peak Reflow Temperature (s): 30

Short maximum time at peak reflow temperature ensures proper soldering and prevents damage to the transistor during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures effective soldering and strong mechanical bonds for reliable performance.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for fast switching speeds and high-frequency operation in various electronic applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC857C,235 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

420

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.65 V

Trade Compliance

BC857C,235 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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