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2N3859AD75Z

Fairchild Semiconductor

2N3859AD75Z by Fairchild Semiconductor

2N3859AD75Z by Fairchild Semiconductor is a NPN bipolar junction transistor with a max collector-emitter voltage of 60V and a max collector current of 0.5A. It has a min DC current gain of 100, making it suitable for switching applications. With a nominal transition frequency of 90MHz, this transistor is ideal for high-frequency operations in various electronic circuits.

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Overview

Unleash the power of innovation with the 2N3859AD75Z by Fairchild Semiconductor. As a leading manufacturer in the industry, Fairchild Semiconductor delivers top-quality Small Signal Bipolar Junction Transistors (BJT) that are perfect for a wide range of applications, including switching tasks. With its NPN configuration and high DC current gain, this transistor offers exceptional performance and reliability. Experience the benefits of this product's maximum collector-emitter voltage of 60V and maximum operating temperature of 150°C, providing you with the confidence you need for your projects. Trust Fairchild Semiconductor to bring you cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable construction makes this transistor ideal for portable electronic devices.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering versatility.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation.

Package Shape: ROUND

Round shape offers easy mounting and space-saving design, perfect for compact electronic projects.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during assembly.

No. of Terminals: 3

Three terminals allow for simple circuit connections and facilitate easy integration into circuits.

Maximum Power Dissipation (Abs): 0.2 W

With a high maximum power dissipation, this transistor can handle heavy loads without overheating.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers efficient heat dissipation and compact design for space-constrained applications.

Minimum DC Current Gain (hFE): 100

High DC current gain ensures reliable amplification and signal processing in various circuits.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for harsh environments.

Maximum Collector-Emitter Voltage: 60 V

High collector-emitter voltage rating provides versatility and compatibility with different voltage levels.

Transistor Element Material: SILICON

Silicon material ensures high performance and stability in a wide range of operating conditions.

Maximum Collector Current (IC): 0.5 A

High collector current rating allows for efficient current handling in various applications.

Terminal Finish: Matte Tin (Sn)

Matte tin finish provides excellent conductivity and corrosion resistance for long-lasting performance.

Terminal Position: BOTTOM

Bottom terminal position simplifies circuit board layout and ensures easy connections during assembly.

Nominal Transition Frequency (fT): 90 MHz

High transition frequency allows for fast switching speeds and optimal performance in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N3859AD75Z attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Fairchild Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N3859AD75Z Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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