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2N3810

Texas Instruments

2N3810 by Texas Instruments

2N3810 by Texas Instruments is a PNP BJT with 2 elements, hFE of 150, and VCE of 60V. Ideal for amplifier applications, it has a max operating temp of 200°C and fT of 100MHz. The package is cylindrical with wire terminals in an isolated case.

Median Price

$19.175

Lifecycle Status

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1k+

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Verical

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Digiode

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TEDSS.com

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Nova Conductors

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American Microsemiconductor Inc.

USA . 48 parts In-Stock

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Electro Sonic

Canada . 90 parts In-Stock

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$14.920

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Anansix

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Component Sense

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Electronic Expediters

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ComSIT Distribution GmbH

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Prism Electronics

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Standard Data Resources

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Electro Mavin

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Elcom Components

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Corel Iberica Componentes, S.L.

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First Choice Components Inc.

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ChromeModa Solutions

Germany . 2,586 parts In-Stock

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$1.555

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$1.275

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Ampacity Inc.

Singapore . 313 parts In-Stock

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$13.840

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Corphita

USA . 8,553 parts In-Stock

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Advanced Electronics

New Zealand . 600 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$16.620

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$15.789

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Continental Prestige Electronics

USA . 243 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Microchip USA

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Marpe Global Electronics

Taiwan . 6,873 parts In-Stock

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QualityLine Systems

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XL Components Corporation

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Argo Parts USA

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IDEA Electronic Components Group

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Glotronic Ltd.

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DigiPath Technology Company

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Perfect Parts

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RTC Component Inc.

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Overview

Unleash the power of innovation with the Texas Instruments 2N3810 Small Signal Bipolar Junction Transistor. Manufactured with precision and expertise, this PNP transistor is designed for high-performance amplification applications, delivering exceptional results in a compact package. With a maximum operating temperature of 200°C and a maximum collector-emitter voltage of 60V, this transistor guarantees reliability and durability. Upgrade your projects with the 2N3810 and experience the quality and value that only Texas Instruments can provide.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides excellent heat dissipation, ensuring the transistor can operate at high temperatures for extended periods of time without overheating.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits and are suitable for a wide range of applications, making this product versatile.

Configuration: SEPARATE, 2 ELEMENTS

Having separate elements allows for more precise control and customization in circuit design, enhancing performance and efficiency.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and reliability in amplification circuits.

Maximum Collector-Emitter Voltage: 60 V

With a high maximum collector-emitter voltage, this transistor can handle higher voltage levels, making it suitable for a variety of voltage amplification tasks.

Nominal Transition Frequency (fT): 100 MHz

The high transition frequency allows for faster switching speeds and better high-frequency performance, making this transistor ideal for applications that require high-speed operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N3810 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOW NOISE

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

150

JEDEC-95 Code:

TO-78

JESD-30 Code:

O-MBCY-W6

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N3810 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-435-3726, 5961004353726, 5961-00-006-9054, 5961000069054, 5961-00-929-7135, 5961009297135, 5961-01-265-6894, 5961012656894, 5961-99-116-7785, 5961991167785

NIIN

004353726, 000069054, 009297135, 012656894, 991167785

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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