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2N3859A

Vishay Intertechnology

2N3859A by Vishay Intertechnology

2N3859A by Vishay Intertechnology is a NPN BJT with hFE of 100 and fT of 90 MHz. It comes in a plastic/epoxy package with wire terminals, suitable for small signal applications like amplification circuits.

Median Price

$1.000

Lifecycle Status

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1k+

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Bristol Electronics

USA . 417 parts In-Stock

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TEDSS.com

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American Microsemiconductor Inc.

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Electro Mavin

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J2 Sourcing AB

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ZD Integrated Circuits Inc.

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Digiode

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ACDS - Activité Composants Distribution Service

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Tech-Mark Corp

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MISTER SPROCKETS

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Electronic Expediters

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Nova Conductors

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Resion

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Fibra_Brandt Electronic GMBH

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Prism Electronics

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LittleDiode

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Electronics Depot

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Sunrise Surplus Inc.

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Corohmni

South Africa . 28 parts In-Stock

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Aztec Data Supply Inc.

USA . 3,328 parts In-Stock

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AZTECH Wire

Italy . 219 parts In-Stock

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Semicontronic

India . 174 parts In-Stock

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Component Stockers USA

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QUARKTWIN TECHNOLOGY LTD

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Metaverse IC Inc.

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Continental Prestige Electronics

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Glotronic Ltd.

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Supply Digital

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Overview

Discover the power of the 2N3859A by Vishay Intertechnology, a top-quality Small Signal Bipolar Junction Transistor designed to exceed expectations. With a reputation for excellence, Vishay Intertechnology ensures reliability and performance in every product. Ideal for a variety of applications, this NPN transistor offers unmatched value and benefits to customers seeking efficiency and precision in their projects. Experience the difference with the 2N3859A and take your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and protection for the transistor, making it durable and suitable for a wide range of applications.

Polarity or Channel Type: NPN

Common NPN type allows for easy integration into circuits and compatibility with other NPN components.

Configuration: SINGLE

Simplifies circuit design and operation by having only one transistor in the package.

Package Shape: ROUND

Compact round shape enables easy mounting and placement in various electronic devices.

Terminal Form: WIRE

Wire terminals provide secure connections and ease of soldering during assembly.

No. of Terminals: 3

Sufficient number of terminals for connecting to external circuits and biasing the transistor.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers ease of handling and insertion into sockets or PCBs.

Minimum DC Current Gain (hFE): 100

High DC current gain ensures efficient and stable amplification of signals in various circuit configurations.

Transistor Element Material: SILICON

Silicon material offers excellent performance characteristics such as high gain and low noise, making it suitable for a wide range of applications.

Terminal Position: BOTTOM

Bottom terminal position allows for easy mounting on PCBs and facilitates heat dissipation.

Nominal Transition Frequency (fT): 90 MHz

High transition frequency enables fast switching and amplification of high-frequency signals, ideal for applications requiring high-speed operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N3859A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Vishay Intertechnology

Specs

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N3859A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-103-3844, 5961001033844, 5961-01-043-2423, 5961010432423

NIIN

001033844, 010432423

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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