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BC847CTT1

Onsemi

BC847CTT1 by Onsemi

BC847CTT1 by Onsemi is a NPN BJT transistor with 3 terminals. It has a max power dissipation of 0.15W and min DC current gain of 420. Ideal for amplifier applications, it operates at up to 150°C with a max collector-emitter voltage of 45V.

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Chip Stock

USA . 59,000 parts In-Stock

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Vyrian

USA . 8,656 parts In-Stock

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R&J Components

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Digiode

USA . 2,381 parts In-Stock

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Nova Conductors

Japan . 650 parts In-Stock

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VNN

France . 286 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,829 parts In-Stock

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$1.960

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Ampacity Inc.

Singapore . 839 parts In-Stock

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$18.050

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AZTECH Wire

Italy . 683 parts In-Stock

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Semicontronic

India . 538 parts In-Stock

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$26.050

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$25.399

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Kulean Microsystems

USA . 7,592 parts In-Stock

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TANS Electronics

Latvia . 6,587 parts In-Stock

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Continental Prestige Electronics

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Problanco Electronics

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Argo Parts USA

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Corphita

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SupplyDigital Components

Austria . 679 parts In-Stock

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UHIMA Technologies

Türkiye . 300 parts In-Stock

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Corohmni

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Bastille Electronics

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Overview

Upgrade your electronic projects with the BC847CTT1 from Onsemi, the leading manufacturer of high-quality Small Signal Bipolar Junction Transistors. This NPN transistor offers superior performance in amplifier applications, with a minimum DC current gain of 420 and a maximum power dissipation of 0.15 W. Its small outline package and gull wing terminals make it easy to integrate into any design, while its maximum operating temperature of 150°C ensures reliability in any environment. Trust Onsemi's reputation for excellence and choose the BC847CTT1 for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and helps protect the internal components, making the transistor more durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and installation, making the transistor easy to use.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring optimal performance in amplifier circuits.

Surface Mount: YES

Allows for easy and convenient mounting on circuit boards, saving space and facilitating mass production.

Maximum Power Dissipation: 0.15 W

With a low power dissipation, this transistor is energy-efficient and less likely to overheat during operation.

Minimum DC Current Gain (hFE): 420

A high DC current gain ensures reliable and consistent amplification of signals in the circuit.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without compromising performance or reliability.

Maximum Collector-Emitter Voltage: 45 V

The high collector-emitter voltage rating allows for greater voltage handling capability, suitable for a wide range of applications.

Maximum Collector Current (IC): 0.1 A

Capable of handling higher collector current, making it suitable for applications that require higher current amplification.

Nominal Transition Frequency (fT): 100 MHz

With a high transition frequency, this transistor can amplify higher frequency signals accurately and efficiently.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC847CTT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

420

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC847CTT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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