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2SD1664T100Q

ROHM

2SD1664T100Q by ROHM

ROHM 2SD1664T100Q is a NPN BJT transistor with VCEsat of 0.4V, hFE of 120, and IC of 1A. Ideal for switching applications in small outline packages, it operates up to 150°C with a max voltage of 32V.

Median Price

$0.412

Lifecycle Status

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Bristol Electronics

USA . 998 parts In-Stock

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ACDS - Activité Composants Distribution Service

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AZTECH Wire

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Ampacity Inc.

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Epart123

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Overview

Discover the power of the 2SD1664T100Q by ROHM, a high-quality NPN Small Signal Bipolar Junction Transistor designed for switching applications. With a maximum VCEsat of just 0.4V and a minimum DC current gain of 120, this transistor offers reliable performance and efficiency. ROHM, known for its superior manufacturing standards, ensures that each component meets strict quality control measures. Ideal for a wide range of electronic devices, this transistor provides customers with exceptional value and benefits, making it a top choice for engineers and hobbyists alike. Unlock new possibilities with the 2SD1664T100Q from ROHM.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is lightweight and durable, making this transistor easy to handle and install in various electronic applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering high efficiency and low noise operation.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity in applications where only one transistor is required.

Transistor Application: SWITCHING

Designed for switching applications, this transistor provides fast switching speeds and efficient performance.

Surface Mount: YES

Surface mount compatibility allows for easy integration onto printed circuit boards, saving space and enabling high-density designs.

Maximum VCEsat: 0.4 V

Low VCE saturation voltage ensures minimal power loss and high efficiency during operation.

Package Shape: RECTANGULAR

Rectangular package shape offers versatility in placement and mounting options for various electronic systems.

Terminal Form: FLAT

Flat terminals provide secure connections and facilitate soldering in assembly processes.

No. of Terminals: 3

Three terminals allow for easy interfacing with external circuitry and components, enhancing connectivity and functionality.

Maximum Power Dissipation (Abs): 2 W

High power dissipation capability ensures reliable operation and performance under demanding conditions.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and enables compact designs in electronic systems.

Maximum Power Dissipation Ambient: 2 W

Efficient power dissipation in ambient conditions ensures stable and safe operation of the transistor.

Minimum DC Current Gain (hFE): 120

High DC current gain provides amplification and signal processing capabilities, making this transistor suitable for various applications.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for flexibility in usage across different environmental conditions.

Maximum Collector-Emitter Voltage: 32 V

High collector-emitter voltage rating enables safe and reliable operation in high voltage applications.

Transistor Element Material: SILICON

Silicon material ensures high performance, reliability, and stability in electronic circuits and systems.

Maximum Collector Current (IC): 1 A

High collector current rating allows for handling larger current loads, making this transistor suitable for power applications.

Terminal Finish: Tin/Copper (Sn/Cu)

Tin/copper terminal finish provides excellent conductivity and solderability for reliable connections in electronic assemblies.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and layout, enhancing ease of use and installation.

Case Connection: COLLECTOR

Collector case connection facilitates efficient heat dissipation and thermal management in the transistor.

Maximum Time At Peak Reflow Temperature (s): 10

Short reflow time minimizes thermal stress on the transistor during soldering processes, ensuring long-term reliability.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance enables robust soldering and assembly of the transistor in manufacturing processes.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency allows for fast response and signal processing in high-frequency applications, making this transistor suitable for critical signal switching tasks.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SD1664T100Q attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

32 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e2

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

2 W

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Copper (Sn/Cu)

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

2SD1664T100Q Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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