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2SD1624S-TD-E

Onsemi

2SD1624S-TD-E by Onsemi

2SD1624S-TD-E by Onsemi is a NPN BJT transistor for switching applications. It has hFE of 140, VCE of 50V, and IC of 3A. With a fT of 150MHz, it's ideal for small outline packages in surface mount technology.

Median Price

$0.678

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,351 parts In-Stock

1+ parts

$0.426

100+ parts

$0.246

1k+ parts

$0.188

10k+ parts

-

1,351

$0.426

$0.246

$0.188

-

Farnell

UK . 193 parts In-Stock

1+ parts

$0.678

100+ parts

$0.305

1k+ parts

$0.227

10k+ parts

$0.189

193

$0.678

$0.305

$0.227

$0.189

Newark

USA . 3,767 parts In-Stock

1+ parts

$0.989

100+ parts

$0.413

1k+ parts

$0.290

10k+ parts

-

3,767

$0.989

$0.413

$0.290

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Mouser Electronics

USA . 1,651 parts In-Stock

1+ parts

$1.000

100+ parts

$0.412

1k+ parts

$0.282

10k+ parts

$0.229

1,651

$1.000

$0.412

$0.282

$0.229

DigiKey

USA . 1,872 parts In-Stock

1+ parts

$1.060

100+ parts

$0.430

1k+ parts

$0.332

10k+ parts

-

1,872

$1.060

$0.430

$0.332

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Element14

Singapore . 193 parts In-Stock

1+ parts

$1.210

100+ parts

$0.534

1k+ parts

$0.348

10k+ parts

$0.334

193

$1.210

$0.534

$0.348

$0.334

Flip Electronics (Authorized)

USA . 3,852 parts In-Stock

1+ parts

-

100+ parts

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3,852

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Rochester

USA . 2,597 parts In-Stock

1+ parts

-

100+ parts

$0.272

1k+ parts

$0.225

10k+ parts

$0.201

2,597

-

$0.272

$0.225

$0.201

Verical

USA . 2,370 parts In-Stock

1+ parts

-

100+ parts

-

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$0.251

2,370

-

-

-

$0.251

Chip1Stop

Japan . 1,350 parts In-Stock

1+ parts

-

100+ parts

$0.355

1k+ parts

$0.345

10k+ parts

-

1,350

-

$0.355

$0.345

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,814 parts In-Stock

1+ parts

$0.211

100+ parts

-

1k+ parts

-

10k+ parts

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1,814

$0.211

-

-

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Nova Conductors

Japan . 21 parts In-Stock

1+ parts

$0.271

100+ parts

-

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21

$0.271

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-

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Chip Stock

USA . 57,000 parts In-Stock

1+ parts

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57,000

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Flip Electronics

USA . 3,852 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,852

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Vyrian

USA . 1,360 parts In-Stock

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1,360

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ACDS - Activité Composants Distribution Service

France . 670 parts In-Stock

1+ parts

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670

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,044 parts In-Stock

1+ parts

$0.200

100+ parts

-

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1,044

$0.200

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-

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Corohmni

South Africa . 458 parts In-Stock

1+ parts

$0.222

100+ parts

-

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458

$0.222

-

-

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Argo Parts USA

USA . 4,247 parts In-Stock

1+ parts

$0.271

100+ parts

-

1k+ parts

-

10k+ parts

$0.263

4,247

$0.271

-

-

$0.263

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.271

100+ parts

-

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100

$0.271

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Perfect Parts

USA . 12,814 parts In-Stock

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12,814

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Kulean Microsystems

USA . 7,595 parts In-Stock

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7,595

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SupplyDigital Components

Austria . 6,352 parts In-Stock

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6,352

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TANS Electronics

Latvia . 2,858 parts In-Stock

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2,858

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Problanco Electronics

Mexico . 2,213 parts In-Stock

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2,213

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Authorized Procurement Solutions

USA . 1,900 parts In-Stock

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1,900

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Continental Prestige Electronics

USA . 985 parts In-Stock

1+ parts

-

100+ parts

$0.333

1k+ parts

$0.198

10k+ parts

$0.191

985

-

$0.333

$0.198

$0.191

GreenTree Electronics

Israel . 413 parts In-Stock

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413

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Kepictronics

USA . 100 parts In-Stock

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100

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UHIMA Technologies

Türkiye . 33 parts In-Stock

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33

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Overview

Upgrade your electronic projects with the 2SD1624S-TD-E by Onsemi, a high-quality NPN small signal bipolar junction transistor. Manufactured by Onsemi, known for their top-notch components, this transistor is perfect for switching applications. With a maximum collector-emitter voltage of 50V and a collector current of 3A, this transistor offers exceptional performance and reliability. Its compact package shape and surface mount capability make it ideal for various electronics projects. Trust Onsemi's reputation for excellence and elevate your designs with the 2SD1624S-TD-E.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, ideal for portable electronic devices.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration with other NPN components in a circuit, enhancing compatibility and flexibility.

Configuration: SINGLE

Single configuration simplifies the design process and reduces the complexity of the circuit, making it more reliable and easier to troubleshoot.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can quickly turn on and off, making it suitable for digital circuits and power control.

Surface Mount: YES

Surface mount capability allows for easy installation on circuit boards, saving space and enabling automated manufacturing processes.

Package Shape: RECTANGULAR

The rectangular shape provides a compact footprint, ideal for applications with limited space or where multiple transistors need to be densely packed.

Terminal Form: FLAT

The flat terminal form ensures a secure connection and easy soldering, enhancing reliability and making assembly more efficient.

No. of Terminals: 3

With 3 terminals, this transistor is easy to connect in a circuit, reducing the chance of wiring errors and simplifying the overall design.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it suitable for compact electronic devices or designs with limited board real estate.

Minimum DC Current Gain (hFE): 140

A minimum DC current gain of 140 ensures consistent and stable amplification, improving the overall performance of the transistor in various applications.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating of 50V allows for use in a wide range of voltage applications, increasing versatility.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, ensuring the transistor operates effectively over a wide temperature range.

Maximum Collector Current (IC): 3 A

With a maximum collector current of 3A, this transistor can handle high power applications, making it suitable for diverse electronic systems.

Terminal Finish: Tin/Bismuth (Sn/Bi)

The tin/bismuth terminal finish provides good solderability and resistance to corrosion, enhancing the lifespan and reliability of the transistor.

Terminal Position: SINGLE

Single terminal position simplifies assembly and installation, reducing the chances of errors and ensuring a secure connection in the circuit.

Case Connection: COLLECTOR

The case connection at the collector terminal allows for efficient heat dissipation, improving the overall thermal performance of the transistor.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures a reliable soldering process without damaging the transistor during assembly.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C enables high-temperature soldering, ensuring a strong and durable connection between the transistor and the PCB.

Nominal Transition Frequency (fT): 150 MHz

The high nominal transition frequency of 150 MHz allows for fast signal switching and amplification, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SD1624S-TD-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

140

JEDEC-95 Code:

TO-243AA

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD1624S-TD-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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