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2SD1782KFRAT146Q

ROHM

2SD1782KFRAT146Q by ROHM

ROHM 2SD1782KFRAT146Q is a NPN BJT transistor with hFE of 120, VCE of 80V, and fT of 120MHz. Ideal for amplifier applications, it operates up to 150°C. This surface-mount device has Gull Wing terminals in a small outline package.

Median Price

$0.286

Lifecycle Status

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6

In-Stock Inventory

1k+

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Newark

USA . 1,904 parts In-Stock

1+ parts

$0.578

100+ parts

$0.261

1k+ parts

$0.153

10k+ parts

-

1,904

$0.578

$0.261

$0.153

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Farnell

UK . 1,906 parts In-Stock

1+ parts

-

100+ parts

$0.233

1k+ parts

$0.147

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1,906

-

$0.233

$0.147

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Element14

Singapore . 1,906 parts In-Stock

1+ parts

-

100+ parts

$0.286

1k+ parts

$0.181

10k+ parts

$0.168

1,906

-

$0.286

$0.181

$0.168

Distributors (In-Stock)

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.153

100+ parts

-

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10

$0.153

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Vyrian

USA . 1,622 parts In-Stock

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1,622

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VNN

France . 90 parts In-Stock

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90

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Distributors (Availability)

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Argo Parts USA

USA . 4,520 parts In-Stock

1+ parts

$0.153

100+ parts

-

1k+ parts

-

10k+ parts

$0.148

4,520

$0.153

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-

$0.148

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.153

100+ parts

$0.149

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-

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2,000

$0.153

$0.149

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Semicontronic

India . 1,925 parts In-Stock

1+ parts

$0.178

100+ parts

$0.174

1k+ parts

$0.173

10k+ parts

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1,925

$0.178

$0.174

$0.173

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Ampacity Inc.

Singapore . 1,817 parts In-Stock

1+ parts

$0.178

100+ parts

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1,817

$0.178

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Continental Prestige Electronics

USA . 2,726 parts In-Stock

1+ parts

$0.434

100+ parts

$0.222

1k+ parts

$0.125

10k+ parts

$0.097

2,726

$0.434

$0.222

$0.125

$0.097

Overview

Unlock the power of quality and reliability with the 2SD1782KFRAT146Q by ROHM. As a leading manufacturer in the industry, ROHM delivers top-notch Small Signal Bipolar Junction Transistors for various applications like amplifiers. With a focus on customer satisfaction, this NPN transistor offers exceptional performance, durability, and ease of installation with its surface mount feature. Experience seamless operation and unmatched value with the 2SD1782KFRAT146Q, setting new standards in the world of electronic components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection and durability for the transistor, making it reliable for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate into electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring optimal performance in amplifier circuits.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and space in electronic devices.

Package Shape: RECTANGULAR

The rectangular shape offers a standardized form factor for easy mounting and fitting in electronic designs.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and enable easier soldering during assembly.

No. of Terminals: 3

Having a small number of terminals simplifies circuit connections and reduces the risk of errors during installation.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for compact electronic designs.

Minimum DC Current Gain (hFE): 120

A high minimum DC current gain ensures stable and consistent amplification performance in various circuit conditions.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range allows for reliable performance in a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 80 V

The high collector-emitter voltage rating makes this transistor suitable for applications requiring higher voltage capabilities.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistors, ensuring good performance and durability.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor can handle moderate power requirements in amplification circuits.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit connections and allows for easy integration into various circuit layouts.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures high quality and reliability for automotive applications.

Nominal Transition Frequency (fT): 120 MHz

A high nominal transition frequency allows for efficient signal amplification and high-frequency performance in amplifier circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SD1782KFRAT146Q attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD1782KFRAT146Q Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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