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2SD1048-6-TB-E

Onsemi

2SD1048-6-TB-E by Onsemi

The Onsemi 2SD1048-6-TB-E is a NPN BJT transistor with max. power dissipation of 0.2W, hFE of 200, and fT of 250MHz. Ideal for small signal applications in electronics due to its high transition frequency and low collector-emitter voltage. Suitable for surface mount designs with a gull wing terminal form.

Median Price

$0.127

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 6,031 parts In-Stock

1+ parts

$0.420

100+ parts

$0.165

1k+ parts

$0.098

10k+ parts

$0.071

6,031

$0.420

$0.165

$0.098

$0.071

Arrow

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

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$0.066

9,000

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$0.066

Verical

USA . 3,000 parts In-Stock

1+ parts

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$0.127

10k+ parts

$0.116

3,000

-

-

$0.127

$0.116

Chip1Stop

Japan . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.127

1k+ parts

$0.094

10k+ parts

$0.085

3,000

-

$0.127

$0.094

$0.085

Flip Electronics (Authorized)

USA . 2,850 parts In-Stock

1+ parts

-

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2,850

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Distributors (In-Stock)

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.120

100+ parts

-

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300

$0.120

-

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Digiode

USA . 1,613 parts In-Stock

1+ parts

$0.294

100+ parts

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1,613

$0.294

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Bristol Electronics

USA . 2,097 parts In-Stock

1+ parts

$0.362

100+ parts

$0.181

1k+ parts

$0.072

10k+ parts

-

2,097

$0.362

$0.181

$0.072

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Chip Stock

USA . 74,000 parts In-Stock

1+ parts

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74,000

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Vyrian

USA . 5,771 parts In-Stock

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5,771

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Flip Electronics

USA . 2,850 parts In-Stock

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2,850

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ACDS - Activité Composants Distribution Service

France . 2,097 parts In-Stock

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2,097

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Dan-Mar Components

USA . 2,097 parts In-Stock

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2,097

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 5,533 parts In-Stock

1+ parts

$0.056

100+ parts

$0.055

1k+ parts

$0.054

10k+ parts

-

5,533

$0.056

$0.055

$0.054

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Corohmni

South Africa . 338 parts In-Stock

1+ parts

$0.064

100+ parts

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338

$0.064

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Argo Parts USA

USA . 446 parts In-Stock

1+ parts

$0.120

100+ parts

-

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$0.116

446

$0.120

-

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$0.116

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.120

100+ parts

-

1k+ parts

$0.114

10k+ parts

$0.112

100

$0.120

-

$0.114

$0.112

Continental Prestige Electronics

USA . 4,916 parts In-Stock

1+ parts

$0.271

100+ parts

$0.127

1k+ parts

$0.066

10k+ parts

$0.050

4,916

$0.271

$0.127

$0.066

$0.050

Corphita

USA . 700 parts In-Stock

1+ parts

$0.279

100+ parts

-

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700

$0.279

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Component Stockers USA

USA . 19,183 parts In-Stock

1+ parts

$0.390

100+ parts

$0.120

1k+ parts

$0.090

10k+ parts

$0.060

19,183

$0.390

$0.120

$0.090

$0.060

Aztec Data Supply Inc.

USA . 1,930 parts In-Stock

1+ parts

$0.394

100+ parts

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1,930

$0.394

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Metaverse IC Inc.

Canada . 306,000 parts In-Stock

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Authorized Procurement Solutions

USA . 12,000 parts In-Stock

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Kepictronics

USA . 9,000 parts In-Stock

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Kulean Microsystems

USA . 8,262 parts In-Stock

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8,262

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QUARKTWIN TECHNOLOGY LTD

USA . 7,991 parts In-Stock

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7,991

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Problanco Electronics

Mexico . 6,272 parts In-Stock

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Lixinc

USA . 5,500 parts In-Stock

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SupplyDigital Components

Austria . 3,498 parts In-Stock

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3,498

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TANS Electronics

Latvia . 2,706 parts In-Stock

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Glotronic Ltd.

UK . 2,400 parts In-Stock

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2,400

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UHIMA Technologies

Türkiye . 313 parts In-Stock

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313

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Overview

Unlock the potential of your electronic projects with the 2SD1048-6-TB-E by Onsemi. Known for their superior quality and reliability, Onsemi's Small Signal Bipolar Junction Transistors (BJT) are perfect for a wide range of applications. This NPN transistor offers exceptional performance and efficiency, making it a valuable choice for your designs. With a maximum collector-emitter voltage of 15V and a minimum DC current gain of 200, this transistor provides the power and stability you need. Trust Onsemi to deliver cutting-edge technology that meets your needs. Elevate your projects with the 2SD1048-6-TB-E.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Suitable for a wide range of applications including amplification and switching.

Configuration: SINGLE

Simplified design and easy to work with in circuit layouts.

Surface Mount: YES

Allows for efficient PCB mounting and saves space on the board.

Package Shape: RECTANGULAR

Ease of handling and fitting into circuit layouts.

Terminal Form: GULL WING

Improved thermal performance and mechanical strength.

Maximum Power Dissipation (Abs): 0.2 W

Efficient power handling capabilities for various applications.

Package Style (Meter): SMALL OUTLINE

Compact package size for space-constrained designs.

Minimum DC Current Gain (hFE): 200

Provides consistent and reliable amplification performance.

Maximum Operating Temperature: 125 °C

Suitable for use in a wide range of operating conditions.

Maximum Collector-Emitter Voltage: 15 V

Can handle higher voltage applications with ease.

Transistor Element Material: SILICON

Highly reliable material with good thermal properties.

Maximum Collector Current (IC): 0.7 A

Capable of handling moderate current levels.

Terminal Finish: TIN BISMUTH

Provides good electrical conductivity and corrosion resistance.

Terminal Position: DUAL

Allows for easy connection in various circuit configurations.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering and reliability during assembly.

Peak Reflow Temperature °C: 260

Withstands high-temperature processes during manufacturing.

Nominal Transition Frequency (fT): 250 MHz

Ideal for high-frequency applications such as RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SD1048-6-TB-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD1048-6-TB-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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