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2SD1815T-TL-E

Onsemi

2SD1815T-TL-E by Onsemi

The Onsemi 2SD1815T-TL-E is a NPN BJT with max power dissipation of 20W, hFE of 200, and IC of 3A. Ideal for surface mount applications in electronics due to its single configuration. Operates up to 150°C making it suitable for various small signal amplification tasks.

Median Price

$0.464

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 41,990 parts In-Stock

1+ parts

-

100+ parts

$0.439

1k+ parts

$0.364

10k+ parts

$0.325

41,990

-

$0.439

$0.364

$0.325

DigiKey

USA . 41,990 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.550

10k+ parts

-

41,990

-

-

$0.550

-

Flip Electronics (Authorized)

USA . 1,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,400

-

-

-

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Mouser Electronics

USA . 26 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.464

10k+ parts

$0.323

26

-

-

$0.464

$0.323

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,658 parts In-Stock

1+ parts

$0.358

100+ parts

-

1k+ parts

-

10k+ parts

-

1,658

$0.358

-

-

-

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.520

100+ parts

-

1k+ parts

-

10k+ parts

-

300

$0.520

-

-

-

Bristol Electronics

USA . 980 parts In-Stock

1+ parts

$0.825

100+ parts

$0.305

1k+ parts

$0.231

10k+ parts

-

980

$0.825

$0.305

$0.231

-

Chip Stock

USA . 67,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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67,000

-

-

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DigiKey Marketplace

USA . 41,990 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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41,990

-

-

-

-

Vyrian

USA . 21,088 parts In-Stock

1+ parts

-

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21,088

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-

-

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VNN

France . 3,802 parts In-Stock

1+ parts

-

100+ parts

-

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-

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3,802

-

-

-

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Flip Electronics

USA . 1,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,400

-

-

-

-

Dan-Mar Components

USA . 980 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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980

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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700

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 21,068 parts In-Stock

1+ parts

$0.320

100+ parts

-

1k+ parts

-

10k+ parts

-

21,068

$0.320

-

-

-

Semicontronic

India . 20,896 parts In-Stock

1+ parts

$0.320

100+ parts

$0.312

1k+ parts

$0.310

10k+ parts

-

20,896

$0.320

$0.312

$0.310

-

Corphita

USA . 512 parts In-Stock

1+ parts

$0.339

100+ parts

-

1k+ parts

-

10k+ parts

-

512

$0.339

-

-

-

Corohmni

South Africa . 81 parts In-Stock

1+ parts

$0.377

100+ parts

-

1k+ parts

-

10k+ parts

-

81

$0.377

-

-

-

Argo Parts USA

USA . 1,938 parts In-Stock

1+ parts

$0.520

100+ parts

-

1k+ parts

-

10k+ parts

$0.504

1,938

$0.520

-

-

$0.504

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.520

100+ parts

$0.510

1k+ parts

-

10k+ parts

-

50

$0.520

$0.510

-

-

Aztec Data Supply Inc.

USA . 448 parts In-Stock

1+ parts

$1.470

100+ parts

-

1k+ parts

-

10k+ parts

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448

$1.470

-

-

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Continental Prestige Electronics

USA . 27,990 parts In-Stock

1+ parts

-

100+ parts

$0.439

1k+ parts

-

10k+ parts

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27,990

-

$0.439

-

-

Kulean Microsystems

USA . 5,806 parts In-Stock

1+ parts

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100+ parts

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5,806

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-

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Glotronic Ltd.

UK . 2,900 parts In-Stock

1+ parts

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2,900

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-

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Problanco Electronics

Mexico . 2,307 parts In-Stock

1+ parts

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2,307

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Kepictronics

USA . 1,186 parts In-Stock

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1,186

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UHIMA Technologies

Türkiye . 860 parts In-Stock

1+ parts

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100+ parts

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860

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-

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SupplyDigital Components

Austria . 375 parts In-Stock

1+ parts

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100+ parts

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375

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-

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TANS Electronics

Latvia . 225 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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225

-

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-

Overview

Elevate your electronic projects with the 2SD1815T-TL-E by Onsemi, a top-tier Small Signal Bipolar Junction Transistor (BJT) that boasts unparalleled quality and reliability. Manufactured by industry leader Onsemi, this NPN transistor offers a maximum power dissipation of 20W and a minimum DC current gain of 200, making it ideal for a wide range of applications. Whether you're designing amplifiers, switching circuits, or audio equipment, this transistor delivers exceptional performance and efficiency. Trust Onsemi to provide cutting-edge technology that exceeds your expectations.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for a wide range of applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in various electronic devices.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving space and reducing manufacturing costs.

Maximum Power Dissipation (Abs): 20 W

High maximum power dissipation rating ensures the transistor can handle heavy load conditions without overheating.

Minimum DC Current Gain (hFE): 200

High minimum DC current gain ensures reliable and consistent amplification performance in circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to function reliably in a wide range of environmental conditions.

Maximum Collector Current (IC): 3 A

High maximum collector current rating allows the transistor to handle high current applications without getting damaged.

Terminal Finish: TIN BISMUTH

Tin Bismuth terminal finish provides good solderability and reliability in PCB assembly processes.

Maximum Time At Peak Reflow Temperature: 30 s

Long maximum time at peak reflow temperature ensures proper soldering of the transistor during assembly.

Peak Reflow Temperature: 260 °C

High peak reflow temperature capability allows for reliable soldering of the transistor in surface mount assembly processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SD1815T-TL-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

2SD1815T-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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