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2SD1949T106Q

ROHM

2SD1949T106Q by ROHM

ROHM's 2SD1949T106Q is a NPN BJT transistor with max. collector-emitter voltage of 50V and max. collector current of 0.5A. It has a min. DC current gain of 120, suitable for switching applications in small outline packages at up to 150°C operating temperature.

Median Price

$0.426

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DigiKey

USA . 3,464 parts In-Stock

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$0.550

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Mouser Electronics

USA . 336 parts In-Stock

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$0.550

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$0.145

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$0.095

336

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Verical

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$0.175

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Chip1Stop

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VNN

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Cyclops Electronics Ltd

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ACDS - Activité Composants Distribution Service

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Nova Conductors

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Ampacity Inc.

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$0.257

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CoreStaff

Japan . 3,000 parts In-Stock

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$0.282

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$0.194

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$0.114

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QUARKTWIN TECHNOLOGY LTD

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Perfect Parts

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Metaverse IC Inc.

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GreenTree Electronics

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Argo Parts USA

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Epart123

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iodParts Technologies Inc.

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Continental Prestige Electronics

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Aranea Global

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Overview

Experience the superior performance and reliability of the ROHM 2SD1949T106Q Small Signal Bipolar Junction Transistor. Manufactured with precision and quality in mind, this NPN transistor is perfect for various switching applications. Its compact size and high DC current gain make it an ideal choice for your electronic projects. Trust ROHM to deliver cutting-edge technology that meets your needs. Upgrade to the 2SD1949T106Q and see the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching purposes, making this product versatile.

Configuration: SINGLE

Simplifies circuit design and makes it easier to integrate this transistor into a circuit.

Transistor Application: SWITCHING

Optimized for switching applications, which allows for fast and efficient operation in such scenarios.

Surface Mount: YES

Facilitates easy and efficient installation onto printed circuit boards, saving time and effort during assembly.

Package Shape: RECTANGULAR

Compact rectangular shape allows for efficient use of space on the circuit board.

No. of Terminals: 3

Simplifies connections and reduces complexity in the circuit design.

Maximum Power Dissipation (Abs): 0.2 W

Can handle moderate power levels, suitable for many common applications.

Package Style (Meter): SMALL OUTLINE

Compact package design saves space on the PCB and allows for denser circuit layouts.

Minimum DC Current Gain (hFE): 120

High DC current gain ensures efficient amplification and signal processing.

Maximum Operating Temperature: 150 °C

Wide operating temperature range makes this transistor suitable for various environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to moderate voltage applications, providing flexibility in circuit design.

Transistor Element Material: SILICON

Silicon transistors have good thermal stability and low leakage current, enhancing overall performance.

Maximum Collector Current (IC): 0.5 A

Can handle moderate current levels, making it suitable for various switching applications.

Terminal Finish: TIN SILVER COPPER

Provides good conductivity and corrosion resistance, ensuring reliable connections.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit layout and connection options.

Maximum Time At Peak Reflow Temperature (s): 10

Can withstand peak reflow temperatures for a short duration during assembly processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability ensures reliable soldering during assembly.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency allows for fast signal processing and switching speeds in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SD1949T106Q attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD1949T106Q Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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