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2SD1801S-TL-E

Onsemi

2SD1801S-TL-E by Onsemi

The Onsemi 2SD1801S-TL-E is a NPN BJT transistor with hFE of 140, VCE of 50V, and IC of 2A. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals. With a transition frequency of 150MHz, it's suitable for high-speed operations requiring low power consumption.

Median Price

$0.218

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 27,892 parts In-Stock

1+ parts

-

100+ parts

$0.185

1k+ parts

-

10k+ parts

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27,892

-

$0.185

-

-

Rochester

USA . 9,662 parts In-Stock

1+ parts

-

100+ parts

$0.252

1k+ parts

$0.209

10k+ parts

$0.187

9,662

-

$0.252

$0.209

$0.187

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 734 parts In-Stock

1+ parts

$0.206

100+ parts

-

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10k+ parts

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734

$0.206

-

-

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Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.229

100+ parts

-

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150

$0.229

-

-

-

Bristol Electronics

USA . 284 parts In-Stock

1+ parts

$0.450

100+ parts

$0.167

1k+ parts

$0.144

10k+ parts

-

284

$0.450

$0.167

$0.144

-

Chip Stock

USA . 46,000 parts In-Stock

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46,000

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Vyrian

USA . 25,873 parts In-Stock

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25,873

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Flip Electronics

USA . 17,500 parts In-Stock

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-

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17,500

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-

-

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ACDS - Activité Composants Distribution Service

France . 284 parts In-Stock

1+ parts

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284

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Dan-Mar Components

USA . 284 parts In-Stock

1+ parts

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284

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 341 parts In-Stock

1+ parts

$0.185

100+ parts

-

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341

$0.185

-

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Corphita

USA . 1,089 parts In-Stock

1+ parts

$0.195

100+ parts

-

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1,089

$0.195

-

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Component Stockers USA

USA . 38,430 parts In-Stock

1+ parts

$0.220

100+ parts

$0.210

1k+ parts

$0.190

10k+ parts

$0.190

38,430

$0.220

$0.210

$0.190

$0.190

Argo Parts USA

USA . 813 parts In-Stock

1+ parts

$0.229

100+ parts

-

1k+ parts

-

10k+ parts

$0.223

813

$0.229

-

-

$0.223

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.229

100+ parts

-

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100

$0.229

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Continental Prestige Electronics

USA . 32,885 parts In-Stock

1+ parts

$0.290

100+ parts

$0.185

1k+ parts

-

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32,885

$0.290

$0.185

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SupplyDigital Components

Austria . 6,265 parts In-Stock

1+ parts

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6,265

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TANS Electronics

Latvia . 4,267 parts In-Stock

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4,267

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Kepictronics

USA . 4,000 parts In-Stock

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4,000

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Glotronic Ltd.

UK . 2,900 parts In-Stock

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2,900

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Kulean Microsystems

USA . 2,724 parts In-Stock

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2,724

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Problanco Electronics

Mexico . 1,715 parts In-Stock

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1,715

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Perfect Parts

USA . 1,318 parts In-Stock

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1,318

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UHIMA Technologies

Türkiye . 461 parts In-Stock

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461

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Microchip USA

USA . 333 parts In-Stock

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333

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Overview

Discover the power of the 2SD1801S-TL-E by Onsemi, a top-notch Small Signal Bipolar Junction Transistor that guarantees high-quality performance and reliability. Manufactured by Onsemi, this NPN transistor is perfect for various applications such as switching circuits. With a maximum collector-emitter voltage of 50V and a maximum collector current of 2A, this transistor offers exceptional value and benefits to customers looking for a durable and efficient solution for their electronic projects. Upgrade your circuits with the 2SD1801S-TL-E and experience superior performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a good balance of durability and cost effectiveness for the product.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile.

Configuration: SINGLE

The single configuration simplifies circuit design and integration.

Transistor Application: SWITCHING

Designed specifically for switching tasks, ensuring optimal performance in such applications.

Surface Mount: YES

Facilitates easy and efficient PCB assembly.

Package Shape: RECTANGULAR

The rectangular shape allows for compact placement on the PCB.

No. of Terminals: 2

Simplified connectivity with only two terminals.

Minimum DC Current Gain (hFE): 140

High minimum current gain ensures consistent and reliable performance.

Maximum Collector-Emitter Voltage: 50 V

With a high voltage tolerance, this transistor can handle a variety of voltage levels.

Maximum Collector Current (IC): 2 A

Capable of handling high current loads, making it suitable for various applications.

Terminal Finish: TIN BISMUTH

Provides a reliable and durable terminal finish for long-term use.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for proper reflow soldering without damaging the component.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during the manufacturing process.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency allows for fast switching speeds in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SD1801S-TL-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

140

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD1801S-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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